書目名稱 | Lifetime Spectroscopy |
副標(biāo)題 | A Method of Defect C |
編輯 | Stefan Rein |
視頻video | http://file.papertrans.cn/586/585965/585965.mp4 |
概述 | A convincing demonstration of a powerful characterization method |
叢書名稱 | Springer Series in Materials Science |
圖書封面 |  |
描述 | .Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.. |
出版日期 | Book 2005 |
關(guān)鍵詞 | Defects in Silicon; Experiment; Lifetime spectroscopy; Semiconductor; Shockly-Read-Hall recombination; me |
版次 | 1 |
doi | https://doi.org/10.1007/3-540-27922-9 |
isbn_softcover | 978-3-642-06453-1 |
isbn_ebook | 978-3-540-27922-8Series ISSN 0933-033X Series E-ISSN 2196-2812 |
issn_series | 0933-033X |
copyright | Springer-Verlag Berlin Heidelberg 2005 |