| 書目名稱 | Lateral Power Transistors in Integrated Circuits | | 編輯 | Tobias Erlbacher | | 視頻video | http://file.papertrans.cn/582/581828/581828.mp4 | | 概述 | Presents advances in the development of novel lateral power transistors.Summarizes the feasibility for different applications based on integration density, process complexity and cost and achievable e | | 叢書名稱 | Power Systems | | 圖書封面 |  | | 描述 | .The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications..In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced..The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices..In the last part, [..] t | | 出版日期 | Book 2014 | | 關(guān)鍵詞 | Charge Compensation; Double-acting RESURF; High Electron Mobility Transistor (HEMT); Kirk Effects; LDMOS | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-319-00500-3 | | isbn_softcover | 978-3-319-34520-8 | | isbn_ebook | 978-3-319-00500-3Series ISSN 1612-1287 Series E-ISSN 1860-4676 | | issn_series | 1612-1287 | | copyright | Springer International Publishing Switzerland 2014 |
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