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Titlebook: Large Scale Integrated Circuits Technology: State of the Art and Prospects; Proceedings of the N Leo Esaki,Giovanni Soncini Conference proc

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樓主: 漠不關心
21#
發(fā)表于 2025-3-25 03:34:15 | 只看該作者
22#
發(fā)表于 2025-3-25 09:10:19 | 只看該作者
LSI: Prospects and Problemsional capability. Integration and miniaturization are the routes by which this is accomplished. Progress in integration and miniaturization involves solving a continual series of technological problems in lithography and chemical process technology.
23#
發(fā)表于 2025-3-25 15:04:25 | 只看該作者
Silicon Crystals for Large Scale Integrated Circuitsd for electronic-grade poly-crystalline silicon., which in 1980 has already exceeded 2000 tons/year (Fig. 1). The major driving force of the electronic industry is integrated circuits, which require high quality large diameter (75–125 mm) single crystalline wafers and ingots.
24#
發(fā)表于 2025-3-25 18:05:36 | 只看該作者
Structural Techniques for Bulk Defects Characterizationaphy, transmission and scanning electron microscopy. Examples of defects analysis are reported concerning the characterization of the defects introduced by the phosphorous predeposition in Si and the study of dark current sources in charge-coupled devices. A final section is dedicated to a more deta
25#
發(fā)表于 2025-3-25 22:13:30 | 只看該作者
26#
發(fā)表于 2025-3-26 00:39:36 | 只看該作者
27#
發(fā)表于 2025-3-26 06:38:15 | 只看該作者
Silicon Epitaxyss for device technology are discussed in other sections of this lecture series. Here we will concentrate on epitaxy by chemical vapor deposition (CVD), which is to be contrasted with physical vapor deposition where atoms to be deposited are emitted by a heated source and are incident on the substra
28#
發(fā)表于 2025-3-26 11:17:27 | 只看該作者
Computer Simulation of Complete IC Fabrication Processon which make it possible to numerically simulate multiple diffused species -- arsenic-boron and phosphorus-boron -- as well as redistribution effects associated with moving boundaries in oxidation and epitaxy will be discussed.
29#
發(fā)表于 2025-3-26 12:54:28 | 只看該作者
Beam Processing Techniques Applied to Crystal Silicon Substratestemperature fabrication steps are rate determined by a solid-state diffusion process (e.g. oxidation, dopant diffusion and redistribution, radiation damage annealing, gettering,...) whose diffusion constant is exponentially dependent on temperature with activation energies of the order of a few eV.
30#
發(fā)表于 2025-3-26 19:26:33 | 只看該作者
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