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Titlebook: Kinetics of Ordering and Growth at Surfaces; Max G. Lagally Book 1990 Plenum Press, New York 1990 Surface science.crystal.kinetics

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書目名稱Kinetics of Ordering and Growth at Surfaces
編輯Max G. Lagally
視頻videohttp://file.papertrans.cn/544/543078/543078.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Kinetics of Ordering and Growth at Surfaces;  Max G. Lagally Book 1990 Plenum Press, New York 1990 Surface science.crystal.kinetics
描述This volume contains the papers presented at the NATO Advanced Research Workshop on "Kinetics of Ordering and Growth at Surfaces", held in Acquafredda di Maratea, Italy, September 18-22, 1989. The workshop‘s goal was to bring together theorists and experimentalists from two related fields, surface science and thin-film growth, to highlight their common interests and overcome a lack of communication between these two communities. Typically surface scientists are only concerned with the microscopic (atomic) description of solids within one monolayer of the surface. Thin-film growers are usually considered more empirical in their approach, concerned primarily with the "quality of their product", and have not necessarily found it useful to incorporate surface science understanding into their art. This workshop aimed to counter at least in some measure these stereotypes. Its focus was on generating dialogue on the fundamental structural and kinetic processes that lead to the initial stages of film growth, from both the surface science and crystal growth perspectives. To achieve this, alternate days emphasized the view of surface science and thin-film growth, with considerable time for d
出版日期Book 1990
關(guān)鍵詞Surface science; crystal; kinetics
版次1
doihttps://doi.org/10.1007/978-1-4613-0653-5
isbn_softcover978-1-4612-7911-2
isbn_ebook978-1-4613-0653-5Series ISSN 0258-1221
issn_series 0258-1221
copyrightPlenum Press, New York 1990
The information of publication is updating

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Structure and Ordering of Metal Overlayers on Si(111) and Ge(111) Surfaces.Au on Si (111) is known to have a 5×1 structure saturating at about 0.4 ML, a √3 structure at 1 ML and a 6×6 at 1.5 ML. We have performed x-ray diffraction studies of all three structures and will discuss the structural analysis and the complications arising from disorder.
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Si Molecular Beam Epitaxy: A Comparison of Scanning Tunneling Microscopy Observations with Computer h biatomic steps. For higher coverages island formation is observed..These observations have been compared with Monte Carlo computer simulations, and the characteristic activation energies involved have been deduced.
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Direct Epitaxial Growth of Quantum Structures with two and Three-Dimensional Carrier Confinementth template; their growth requires additionally a self organization of the epitaxy. The CSL could be used for the direct growth of quantum box superlattices. The TSL have been used to produce quantum wire superlattices. Their unique optical properties are a direct consequence of two dimensional carrier confinement.
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Growth and Ordering of Ag Submonoiayers on Ge(111)the faceting due to heating of a misoriented Ge(111) with submonolayers of Ag is studied in the same way. It is shown that quantitative analysis of growth and ordering is now possible for inhomogeneous surfaces as done so far with homogeneous surfaces.
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Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Studymicroscopy measurements of the ordering and growth of Si on Si(001) are used to illustrate these mechanisms. Diffusion coefficients, growth anisotropy and lateral accommodation coefficients, equilibrium island shapes and free energies, edge desorption energies, and diffusional anisotropy are discussed.
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