Titlebook: Ion Implantation in Semiconductors 1976; Fred Chernow,James A. Borders,David K. Brice Book 1977 Plenum Press, New York 1977 Plantation.cor

令人發(fā)膩

Electrical and Electron Microscope Studies of Boron Molecular Ion Implants into Silicond energy. In this study boron has been implanted from ion beams of B, BCl, Cl + B, BCl., BF, B + F and BF. at doses of 10.and 10. cm. with the energy of the boron atoms constant at 25 keV. The sheet resistance has been measured during isochronal annealing and significant differences are shown to exi

agnostic

傀儡

Enhanced and Inhibited Oxidation of Implanted Silicong species investigated Ge, Si and Ga showed strong passivation. Passivation proved to be partly connected with presence of disordered layers, therefore, oxidation rates correlate well with lattice reordering. As in case of lattice reordering, correlation was found between oxide growth rate and subst

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Defects Introduced into Silicon by Boron Implantation in the MeV Energy Rangesurements performed directly on the produced p-n junctions. These curves, analysed by the “delaying heating method”, are compared to those obtained for low energy implants. Levels located at E. -0.18, E. -0.42, E. +0.26, E. +0.32 eV are identified. They are quite the same as those observed for low e

CHIDE

萬神殿

HEAVY

POLYP

florid

Characteristics of Implanted N-Type Profiles in GaAs Annealed in a Controlled Atmosphere a flowing hydrogen-arsenic atmosphere is adjusted to he near equilibrium with the surface of the implanted GaAs during the heat treatment. The CAT anneal was used to study the characteristics of n-type impurities (Si and S), random implanted at room temperature into GaAs epitaxial layers. In situ i

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