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Titlebook: Ion Implantation in Diamond, Graphite and Related Materials; M. S. Dresselhaus,R. Kalish Textbook 1992 Springer-Verlag Berlin Heidelberg 1

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樓主: Callow
21#
發(fā)表于 2025-3-25 06:50:52 | 只看該作者
22#
發(fā)表于 2025-3-25 10:28:05 | 只看該作者
Ion Implantation,diamond, graphite or any other carbon-based material. In this section the energy loss processes of the incoming energetic ions are discussed in general, ending with some reference to carbon-based materials (Sect. 3.1). The various parameters of the implantation process are then introduced in general
23#
發(fā)表于 2025-3-25 13:51:46 | 只看該作者
24#
發(fā)表于 2025-3-25 19:09:19 | 只看該作者
Implantation-Induced Modifications to Graphite,d graphite-related materials (Chap. 7) is presented. Chapters 8 and 9 present a similar review of ion-implantation studies in diamond and diamond-related materials. Due to the variety of bonding characteristics, crystalline structures and thermodynamic properties, the family of carbon-based material
25#
發(fā)表于 2025-3-25 23:08:25 | 只看該作者
Implantation-Induced Modifications to Graphite-Related Materials,s been done on glassy carbon because it is a material of commercial interest that has been well characterized by a number of techniques. Mention is also made of other graphite-related materials that have been studied by ion implantation, though here the literature is sparse except for the carbon-bas
26#
發(fā)表于 2025-3-26 01:54:16 | 只看該作者
27#
發(fā)表于 2025-3-26 07:45:17 | 只看該作者
28#
發(fā)表于 2025-3-26 10:47:29 | 只看該作者
Concluding Remarks,he basic carbon materials considered, diamond and graphite, have many differences. Diamond exhibits 3-dimensional .. tight tetrahedral bonding, and unusual physical properties result from this bonding (hardness, high thermal conductivity, optical transparency, high index of refraction and wide band-
29#
發(fā)表于 2025-3-26 15:02:24 | 只看該作者
Textbook 1992. Carbon-based materials, diamond, graphite and their many deriva- tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near- surface properties of many kinds of materials, in particular semiconductors, has also
30#
發(fā)表于 2025-3-26 20:05:43 | 只看該作者
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