Titlebook: Introduction to VLSI Silicon Devices; Physics, Technology Badih El-Kareh,Richard J. Bombard Book 1986 Kluwer Academic Publishers 1986 CMOS

不斷的變動

Resistances and their Measurements,s and holes as minority carriers. When silicon is doped with elements of the third group, such as boron, it becomes p-type with holes as majority carriers and electrons as minority carriers. At room temperature the carriers have enough thermal energy to keep in constant but random motion as illustrated in figure 1.1.

拾落穗

Insulated-Gate-Field-Effect-Transistor (IGFET),g the surface under the gate. If a second diffusion pocket is placed as shown in figure 6.1, the inversion layer can be used as a conducting path between the two pockets. This four terminal device constitutes the IGFET (or MOSFET).

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Arthritis

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Psychopathologische und klinische Untersuchungen, computertomographischen Charakteristika untersucht. Eine solche Untersuchung w?re von ihrem Umfang her schon aus methodischen und technischen Gründen an einer einzigen Patientengruppe kaum durchführbar gewesen. Die Studie wurde deshalb in zwei Einzeluntersuchungen an jeweils 50 Patienten gegliedert

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