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Titlebook: Introduction to Thin Film Transistors; Physics and Technolo S.D. Brotherton Book 2013 Springer International Publishing Switzerland 2013 Ac

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書目名稱Introduction to Thin Film Transistors
副標(biāo)題Physics and Technolo
編輯S.D. Brotherton
視頻videohttp://file.papertrans.cn/475/474280/474280.mp4
概述Takes the reader from the basic level to more advanced topics in TFT physics.Covers both TFT devices and technologies that are presently used in products, as well as emerging TFT devices and technolog
圖書封面Titlebook: Introduction to Thin Film Transistors; Physics and Technolo S.D. Brotherton Book 2013 Springer International Publishing Switzerland 2013 Ac
描述.Introduction to Thin Film Transistors. reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. .The large scale manufacturing of a-Si:H TFTs forms the basis of the?active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. .As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and inst
出版日期Book 2013
關(guān)鍵詞Active Matrix Display Technology; Active Matrix Liquid-Crystal Displays (AMLCDs); Active Matrix OLEDs
版次1
doihttps://doi.org/10.1007/978-3-319-00002-2
isbn_softcover978-3-319-03310-5
isbn_ebook978-3-319-00002-2
copyrightSpringer International Publishing Switzerland 2013
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Insulated Gate Field Effect Transistors, IGFETsts of IGFET behaviour. The topic is introduced by a physical description of MOSFET operation, which identifies the linear and saturation operating regimes. A simple analytical model is developed from this, yielding expressions for important parameters such as threshold voltage, saturation voltage an
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Hydrogenated Amorphous Silicon TFT Performanceta-stability of the defect structure in the material. The topics covered in this chapter include a review of the electronic structure and the material properties of a-Si:H, which are largely determined by the density of states, DOS. The DOS consists of band tail states, due to weak Si–Si bonds, and
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Poly-Si TFT Technology and Architectureecursor films. Alternative crystallisation procedures are also reviewed, including metal-induced solid phase crystallisation, as well as advanced procedures for achieving large grain and high mobility TFTs, using green solid-state lasers in addition to modified excimer laser techniques. The architec
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