Titlebook: Intersubband Transitions in Quantum Wells: Physics and Devices; Sheng S. Li,Yan-Kuin Su Book 1998 Springer Science+Business Media New York

只看該作者 · 發(fā)表于 2025-4-1 09:06:02

Normal Incident Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectorsn demonstrated. Two different structures were used for different voltage tuning characteristics. The In.Ga.As/Al.Ga.As quantum wells with 3.5.0. cm. Si doping were used to fabricated MWIR QWIP with bound to bound transition and bound to continuum transition. In.Ga.As/GaAs quantum wells with 1.0. cm.

只看該作者 · 發(fā)表于 2025-4-1 11:36:36

只看該作者 · 發(fā)表于 2025-4-1 16:44:06

只看該作者 · 發(fā)表于 2025-4-1 21:11:37

Far-Infrared (λ,=28.6 μm) GaAs/AlGaAs Quantum Well Photodetectors transitions. The responsivity is comparable to that of mid-infrared GaAs/AlGaAs and In GaAs/GaAs QWIPs. A responsivity of 0.265 A/W and detectivity of 2.5 x 10. cm. at the peak wavelength of 26.9 μm at 4.2K have been achieved. Based on the temperature dependent dark current and response results, it

		自動(dòng)登錄	找回密碼
密碼			To register

關(guān)于派博傳思			派博傳思旗下網(wǎng)站			友情鏈接
派博傳思介紹	公司地理位置	論文服務(wù)流程	影響因子官網(wǎng)	吾愛(ài)論文網(wǎng)	大講堂	北京大學(xué)	Oxford Uni.	Harvard Uni.
發(fā)展歷史沿革	期刊點(diǎn)評(píng)	投稿經(jīng)驗(yàn)總結(jié)	SCIENCEGARD	IMPACTFACTOR	派博系數(shù)	清華大學(xué)	Yale Uni.	Stanford Uni.
\|Archiver\|手機(jī)版\|小黑屋\| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2026-2-5 00:37
Copyright © 2001-2015 派博傳思京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved