找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Integrated Circuit Defect-Sensitivity: Theory and Computational Models; José Pineda Gyvez Book 1993 Springer Science+Business Media New Yo

[復制鏈接]
樓主: FAULT
11#
發(fā)表于 2025-3-23 13:03:27 | 只看該作者
José Pineda de Gyvezus of the World Health Organization says in the Foreword, “This new expanded edition comes as a timely essential aid against the growing threats of inhuman violence and destructive disasters.”978-1-4614-4444-2978-1-4614-4445-9
12#
發(fā)表于 2025-3-23 16:22:15 | 只看該作者
13#
發(fā)表于 2025-3-23 20:16:21 | 只看該作者
14#
發(fā)表于 2025-3-24 01:37:13 | 只看該作者
15#
發(fā)表于 2025-3-24 04:04:18 | 只看該作者
0893-3405 as that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC‘s). Those fabrication plants would be concentrated with only a few market leaders.978-1-4613-6383-5978-1-4615-3158-6Series ISSN 0893-3405
16#
發(fā)表于 2025-3-24 08:27:56 | 只看該作者
Computational Models for Defect-Sensitivity,a malfunction in the respective circuit arises. Critical areas are open connected sets of critical points [36,83,84]. They naturally depend on the layout geometry and on the defect size involved. Thus, the defect-sensitivity of a design is obtained as the ratio of the total critical area to the tota
17#
發(fā)表于 2025-3-24 12:39:44 | 只看該作者
18#
發(fā)表于 2025-3-24 15:19:35 | 只看該作者
19#
發(fā)表于 2025-3-24 19:29:13 | 只看該作者
Single vs. Multiple Layer Critical Areas,odels are good to evaluate the safeness of the artwork as a function of the probability of failure of its layers, that is, whether the patterns can undesirably be broken or joined. In the long trajectory of yield modeling, it was found that by obtaining the critical areas, a more realistic yield pre
20#
發(fā)表于 2025-3-24 23:12:19 | 只看該作者
Introduction,s of silicon layer structures mainly caused by dust particles, process variabilities, and contaminations of the fabrication equipment. Spot defects are in essence random phenomena occurring on the wafer with certain stochastic spatial distribution and also with a stochastic size and frequency per un
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學 Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學 Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2026-1-24 21:54
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復 返回頂部 返回列表
景宁| 莱西市| 潼关县| 肇庆市| 黄冈市| 涪陵区| 兴安盟| 报价| 延津县| 南雄市| 万全县| 介休市| 汉阴县| 海宁市| 弥勒县| 铜鼓县| 怀仁县| 岱山县| 汉源县| 奇台县| 通城县| 广丰县| 高台县| 阜阳市| 色达县| 都兰县| 舞钢市| 新化县| 万州区| 昭通市| 应用必备| 柘荣县| 云南省| 丽江市| 庆云县| 内乡县| 平远县| 四川省| 江达县| 乌兰察布市| 甘肃省|