找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Integrated Circuit Defect-Sensitivity: Theory and Computational Models; José Pineda Gyvez Book 1993 Springer Science+Business Media New Yo

[復(fù)制鏈接]
樓主: FAULT
11#
發(fā)表于 2025-3-23 13:03:27 | 只看該作者
José Pineda de Gyvezus of the World Health Organization says in the Foreword, “This new expanded edition comes as a timely essential aid against the growing threats of inhuman violence and destructive disasters.”978-1-4614-4444-2978-1-4614-4445-9
12#
發(fā)表于 2025-3-23 16:22:15 | 只看該作者
13#
發(fā)表于 2025-3-23 20:16:21 | 只看該作者
14#
發(fā)表于 2025-3-24 01:37:13 | 只看該作者
15#
發(fā)表于 2025-3-24 04:04:18 | 只看該作者
0893-3405 as that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC‘s). Those fabrication plants would be concentrated with only a few market leaders.978-1-4613-6383-5978-1-4615-3158-6Series ISSN 0893-3405
16#
發(fā)表于 2025-3-24 08:27:56 | 只看該作者
Computational Models for Defect-Sensitivity,a malfunction in the respective circuit arises. Critical areas are open connected sets of critical points [36,83,84]. They naturally depend on the layout geometry and on the defect size involved. Thus, the defect-sensitivity of a design is obtained as the ratio of the total critical area to the tota
17#
發(fā)表于 2025-3-24 12:39:44 | 只看該作者
18#
發(fā)表于 2025-3-24 15:19:35 | 只看該作者
19#
發(fā)表于 2025-3-24 19:29:13 | 只看該作者
Single vs. Multiple Layer Critical Areas,odels are good to evaluate the safeness of the artwork as a function of the probability of failure of its layers, that is, whether the patterns can undesirably be broken or joined. In the long trajectory of yield modeling, it was found that by obtaining the critical areas, a more realistic yield pre
20#
發(fā)表于 2025-3-24 23:12:19 | 只看該作者
Introduction,s of silicon layer structures mainly caused by dust particles, process variabilities, and contaminations of the fabrication equipment. Spot defects are in essence random phenomena occurring on the wafer with certain stochastic spatial distribution and also with a stochastic size and frequency per un
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2026-1-24 21:53
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
眉山市| 谷城县| 芜湖县| 高碑店市| 昌都县| 定安县| 定日县| 孟连| 罗甸县| 乌鲁木齐县| 庆云县| 齐河县| 吉木乃县| 双柏县| 巴青县| 五大连池市| 三都| 崇信县| 佛山市| 唐河县| 盖州市| 张家口市| 五河县| 区。| 乌拉特中旗| 桑日县| 平潭县| 弥渡县| 客服| 沂南县| 湘阴县| 广平县| 新化县| 拜泉县| 桂林市| 姜堰市| 万州区| 宁河县| 瓦房店市| 紫金县| 凤翔县|