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Titlebook: Inside NAND Flash Memories; Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi

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書目名稱Inside NAND Flash Memories
編輯Rino Micheloni,Luca Crippa,Alessia Marelli
視頻videohttp://file.papertrans.cn/468/467786/467786.mp4
概述Flash NAND design.NAND – SSD co-development.Radiation effects on Flash memories.Charge trap technology overview.Includes supplementary material:
圖書封面Titlebook: Inside NAND Flash Memories;  Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi
描述Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media.To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera…), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console.The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses.Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits
出版日期Book 2010
關(guān)鍵詞Electronic Devices; Flash Memories; NAND Memories; Solid State Circuits; integrated circuit; single-elect
版次1
doihttps://doi.org/10.1007/978-90-481-9431-5
isbn_softcover978-94-007-9834-2
isbn_ebook978-90-481-9431-5
copyrightSpringer Science+Business Media B.V. 2010
The information of publication is updating

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Program and erase of NAND memory arrays,rt memory cell for this purpose in NAND Flash is the 1T floating gate memory cell, which is based on a MOSFET. In contrast to the 1T1C DRAM cell, which consists of an access transistor and a separate capacitance as charge storage node, the 1T floating gate cell is a MOSFET whose gate dielectric is s
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