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Titlebook: Infrared Detectors and Emitters: Materials and Devices; Peter Capper,C. T. Elliott Book 2001 Springer Science+Business Media New York 2001

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41#
發(fā)表于 2025-3-28 15:44:38 | 只看該作者
Metal Silicide Schottky Infrared Detector Arrays,technologies and its high producibility has no rival in infrared FPA technology at present. Platinum silicide (PtSi) is the best material on p-type Si for mid-wavelength infrared (MWIR: 3-5 p.m) detection and has been successfully used for large format SB FPAs [.]. Despite lower quantum efficiencies
42#
發(fā)表于 2025-3-28 19:25:18 | 只看該作者
Pyroelectric Materials and Devices, can be used to create a flow of current in an external circuit connected to a piece of the material. The effect has been known for many years but it is only since about 1960 that its technological applications have been seriously considered. These have been almost entirely in the field of the detec
43#
發(fā)表于 2025-3-29 00:40:37 | 只看該作者
Uncooled Microbolometer Infrared Sensor Arrays,ince it operates by sensing the temperature rise caused by absorbed infrared radiation (in contrast to other types of infrared detectors [.] which operate at fixed temperatures). Figure 1 shows the fundamental form of a thermal IR sensor: an IR-absorbing plate (area A) is suspended from a large ther
44#
發(fā)表于 2025-3-29 03:07:56 | 只看該作者
45#
發(fā)表于 2025-3-29 10:35:23 | 只看該作者
Tl-Based III-V Alloy Semiconductors,II-VI compound with material growth and processing problems dominated by native defects that limit FPA performance and yield [.]. Tl (thallium)-based III-V alloy semiconductors, TlInSb, TlInAs and TlInP were proposed as possible candidates for future LWIR detector materials [.-.]. Theoretical calcul
46#
發(fā)表于 2025-3-29 12:05:04 | 只看該作者
47#
發(fā)表于 2025-3-29 15:52:49 | 只看該作者
Photoconductive and Non-Equilibrium Devices in HgCdTe and Related Alloys,ether with the alloy’s capability for lattice-matched heterojunctions and band gap engineering, make it the almost ideal material for infrared detectors over a wide wavelength range. Despite its difficult physical properties, which have made the development of crystal growth and device fabrication t
48#
發(fā)表于 2025-3-29 20:23:00 | 只看該作者
49#
發(fā)表于 2025-3-30 01:41:52 | 只看該作者
50#
發(fā)表于 2025-3-30 05:43:38 | 只看該作者
Reduced-Dimensionality HgTe-CdTe for the Infrared,duction of quantum confinement in reduced-dimensionality heterostructures. This was an early motivator for the study of HgTe-CdTe superlattices as an alternative infrared detector material [.,.]. Although thus far such a detector technology has not progressed beyond the testing of single-element pho
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