Titlebook: In-Situ Microscopy in Materials Research; Leading Internationa Pratibha L. Gai Book 1997 Springer Science+Business Media New York 1997 adso

ACE313

書目名稱In-Situ Microscopy in Materials Research影響因子(影響力)




書目名稱In-Situ Microscopy in Materials Research影響因子(影響力)學(xué)科排名




書目名稱In-Situ Microscopy in Materials Research網(wǎng)絡(luò)公開度




書目名稱In-Situ Microscopy in Materials Research網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱In-Situ Microscopy in Materials Research被引頻次




書目名稱In-Situ Microscopy in Materials Research被引頻次學(xué)科排名




書目名稱In-Situ Microscopy in Materials Research年度引用




書目名稱In-Situ Microscopy in Materials Research年度引用學(xué)科排名




書目名稱In-Situ Microscopy in Materials Research讀者反饋




書目名稱In-Situ Microscopy in Materials Research讀者反饋學(xué)科排名

花爭(zhēng)吵

compassion

Simulate

fulcrum

monologue

Hdl348

In-Situ Transmission Electron Microscopy of Thin Film Growth,th of surface structure and internal film microstructure. This allows association between these two critical features in thin film growth. Although examples are mainly included from the work of the author, there is a brief review of other work in the past and at present.

愚笨

圓桶

In-situ REM and TEM Studies of Homo and Hetero-epitaxy on Si Surfaces,the industrial and the fundamental points of view. For their better understanding in situ techniques to observe dynamic processes of thin film growth are indispensable. For investigation of thin film growth, there are many in situ techniques such as RHEED, TED, LEED, ISS, REM, TEM, LEEM, STM, and so

moribund

Atomic-Scale Fabrication of Metal Surfaces by Using Adsorption and Chemical Reaction,y the adsorption. When a large c(2×2)-O domain appears on the surface, Cu atoms are missed from the surface to remove the stress and the (2√2x√√A).45° reconstruction is established. Contrary to this, formation of a quasi-compound of (-Cu-O-) strings and their array in a (2×1) structure is responsibl