| 書目名稱 | Impurities Confined in Quantum Structures | | 編輯 | Per Olof Holtz,Qing Xiang Zhao | | 視頻video | http://file.papertrans.cn/463/462876/462876.mp4 | | 概述 | Includes supplementary material: | | 叢書名稱 | Springer Series in Materials Science | | 圖書封面 |  | | 描述 | The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifol | | 出版日期 | Book 2004 | | 關(guān)鍵詞 | Confinement; Doping; Electronic structure; Impurity; Optical characterization; Quantum structure; Semicond | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-642-18657-8 | | isbn_softcover | 978-3-642-62228-1 | | isbn_ebook | 978-3-642-18657-8Series ISSN 0933-033X Series E-ISSN 2196-2812 | | issn_series | 0933-033X | | copyright | Springer-Verlag Berlin Heidelberg 2004 |
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