Titlebook: III–V Semiconductors; H. C. Freyhardt Conference proceedings 1980 Springer-Verlag Berlin Heidelberg 1980 Halbleiter.applied physics.crysta

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Klaus Gillessen,Albert J. Marshall,Joachim Hesse. To facilitate this process, access to results needs to be possible at local, regional, and national levels and if possible, in real time. Furthermore, such results should be clear, concise, and focused, which permits streamline and efficient research efforts. However, further thought needs to be t

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Klaus Ploogmmation may pave the link between depression and cancer development. We discuss the link between depression and malignant cell transformation considering common molecular mechanisms of inflammation that underpins this plausible association. The complexity of dopaminergic pathways involved in the reg

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ters. Many patients with IEI may benefit from pre-emptive HSCT to decrease the risk of malignancy or if they have had a previously treated malignancy, HSCT may reduce the risk of a second malignancy..This review will outline successes in the field of HSCT for IEI, and specifically consider HSCT in t

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0172-5076 aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos- sibilities and limitat978-3-642-67613-0978-3-642-67611-6Series ISSN 0172-5076

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,Molecular Beam Epitaxy of III–V Compounds,toelectronic device structures may be improved. It is the purpose of this article to review the basic process of molecular beam epitaxy as a crystal growth technique, to indicate present trends and material problems, and — at a time of continuing innovation — to show promise for future application.

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0172-5076 erties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, comple

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,Growth of Binary III–V Semiconductors from Metallic Solutions,n-layer single-crystal growth, which are regarded to be equally relevant for bulk solution growth: Growth mechanisms in correlation with growth conditions in liquid phase epitaxy are discussed. The resulting properties of the thin layers, such as surface morphology and dopant homogeneity, are described.