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Titlebook: III-Nitride LEDs; From UV to Green Shengjun Zhou,Sheng Liu Book 2022 Science Press 2022 III-Nitride semiconductors.Light extraction efficie

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樓主: coerce
11#
發(fā)表于 2025-3-23 12:41:22 | 只看該作者
12#
發(fā)表于 2025-3-23 13:51:09 | 只看該作者
13#
發(fā)表于 2025-3-23 21:40:55 | 只看該作者
High-Efficiency Top-Emitting III-Nitride LEDs,er that, we introduce back reflector and low optical loss electrodes to decrease light loss and improve light extraction efficiency. At the last section, we introduce a type of Ni/Au wire grids transparent conductive layer.
14#
發(fā)表于 2025-3-24 00:47:58 | 只看該作者
https://doi.org/10.1007/978-981-19-0436-3III-Nitride semiconductors; Light extraction efficiency; Internal quantum efficiency; External quantum
15#
發(fā)表于 2025-3-24 04:23:33 | 只看該作者
16#
發(fā)表于 2025-3-24 07:21:19 | 只看該作者
Epitaxial Growth of III-Nitride LEDs,ed. Secondly, InGaN/GaN superlattice and stacked GaN/AlN last quantum barrier to improve the performance of green LED are introduced. Finally, several strategies to improve the performance of ultraviolet LED are discussed in detail.
17#
發(fā)表于 2025-3-24 11:50:00 | 只看該作者
18#
發(fā)表于 2025-3-24 16:33:58 | 只看該作者
Device Reliability and Measurement, the mechanism of forward leakage current and reverse leakage current is analyzed. Thirdly, the method to improve luster consistency is proposed. Finally, transient measurement methods of photometric parameters, colorimetric parameters, and electrical parameters of LEDs are discussed.
19#
發(fā)表于 2025-3-24 20:41:40 | 只看該作者
20#
發(fā)表于 2025-3-25 02:30:53 | 只看該作者
Shengjun Zhou,Sheng LiuPresents the state-of-the-art research on III-nitrides-based LEDs.Covers the physical background, the epitaxial growth and device fabrication of III-nitrides-based LEDs.A valuable source of reference
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