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Titlebook: High-Speed Electronics; Basic Physical Pheno Bengt K?llb?ck,Heinz Beneking Conference proceedings 1986 Springer-Verlag Berlin Heidelberg 19

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樓主: Ensign
21#
發(fā)表于 2025-3-25 06:00:35 | 只看該作者
H. Hillmer,G. Mayer,A. Forchel,K. S. L?chner,E. Bauser in Deutschland und in den Vereinigten Staaten verschieden. In Deutschland konnte ich Tausende und Abertausende von Zeitungsnummern, Hunderte von Jahresberichten von Gewerbegerichten und Gewerkschaftskartellen u. a. m. im Laufe der Jahre, die ich auf diese Untersuchung verwendete, in Mu?e durcharbei
22#
發(fā)表于 2025-3-25 10:27:50 | 只看該作者
23#
發(fā)表于 2025-3-25 12:18:00 | 只看該作者
24#
發(fā)表于 2025-3-25 17:21:19 | 只看該作者
25#
發(fā)表于 2025-3-25 21:51:17 | 只看該作者
Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche PhotodT) bipolar transistor; infrared lasers and detectors based on sequential RT; avalanche photodiodes (APDs) and solid-state photomultipliers based on the recently discovered impact ionization across the band-edge discontinuity. The last section discusses the high speed operation of 1.3–1.6 .m QW APDs.
26#
發(fā)表于 2025-3-26 01:58:23 | 只看該作者
Transport Characteristics in Heterostructure Devicesnd the resonant-tunneling hot electron transistor (RHET). This is followed by a discussion of transport characteristics in the RHET, with special attention given to the resonant tunneling barrier (RTB) used as the emitter barrier of the RHET.
27#
發(fā)表于 2025-3-26 04:48:13 | 只看該作者
Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under Hfrom the grating-coupled 2D-plasmon grew up to 30[μW/cm.] for the applied field of 760[V/cm]. The other related subjects such as the real-space transfer and 2D electron temperature are also demonstrated.
28#
發(fā)表于 2025-3-26 09:27:26 | 只看該作者
An Ultra-Fast Optical Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL)ed as the optically active part of the device where the excitonic absorption can be bleached very rapidly by an external light source. The wider wells trap the excess carriers in a very short time so that the absorption is quickly restored. All optical switches with a time response shorter than 1 ps can be made with such a system.
29#
發(fā)表于 2025-3-26 14:41:28 | 只看該作者
Springer Series in Electronics and Photonicshttp://image.papertrans.cn/h/image/426757.jpg
30#
發(fā)表于 2025-3-26 18:13:27 | 只看該作者
https://doi.org/10.1007/978-3-642-82979-6electronics; photonics; semiconductor
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