Titlebook: High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films; Akari Takayama Book 2015 Springer Ja

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書目名稱High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films影響因子(影響力)學(xué)科排名




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2190-5053 ba surface states is reduced by decreasing the film thickness, which indicates the considerable interaction of Rashba spin-split states between the surface and Bi/Si interface..978-4-431-56372-3978-4-431-55028-0Series ISSN 2190-5053 Series E-ISSN 2190-5061

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https://doi.org/10.1007/978-4-431-55028-0ARPES; Bi/Si interface; Bismuth Thin Film; Rashba Effect; Rashba Surface States; Rashba-Dresselhaus Effec

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付出

Conclusion,lous Rashba effect of Bi/Si(111) thin film by using the developed spectrometer. In this chapter, conclusions regarding the development of the spin-resolved photoemission spectrometer and the spin-resolved ARPES results of the Bi Rashba effect are made.

reserve

Development of High Resolution Spin-Resolved Photoemission Spectrometer,This chapter describes an ultrahigh-resolution spin-resolved photoemission spectrometer with a highly efficient mini Mott detector. To determine the three-dimensional spin-polarization, an electron deflector has been situated between the analyzer and the Mott detector.

harbinger

Rashba Effect at Interface of a Bi Thin Film on Si(111),The electronic structure of the bismuth thin film near the . point varies depending on the film thickness . due to the quantization along the thickness direction (perpendicular to the surface).

Decrepit

Intend

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High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films978-4-431-55028-0Series ISSN 2190-5053 Series E-ISSN 2190-5061