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Titlebook: High-Bandwidth Memory Interface; Chulwoo Kim,Hyun-Woo Lee,Junyoung Song Book 2014 The Author(s) 2014 DRAM.DRAM Circuit Design.DRAM Interfa

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發(fā)表于 2025-3-21 18:17:51 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱High-Bandwidth Memory Interface
編輯Chulwoo Kim,Hyun-Woo Lee,Junyoung Song
視頻videohttp://file.papertrans.cn/427/426557/426557.mp4
概述Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design.Presents state-of-the-art techniques for memory interface design.Covers memo
叢書名稱SpringerBriefs in Electrical and Computer Engineering
圖書封面Titlebook: High-Bandwidth Memory Interface;  Chulwoo Kim,Hyun-Woo Lee,Junyoung Song Book 2014 The Author(s) 2014 DRAM.DRAM Circuit Design.DRAM Interfa
描述This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.
出版日期Book 2014
關(guān)鍵詞DRAM; DRAM Circuit Design; DRAM Interface Design; High Performance Memory Design; High Performance Memor
版次1
doihttps://doi.org/10.1007/978-3-319-02381-6
isbn_softcover978-3-319-02380-9
isbn_ebook978-3-319-02381-6Series ISSN 2191-8112 Series E-ISSN 2191-8120
issn_series 2191-8112
copyrightThe Author(s) 2014
The information of publication is updating

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發(fā)表于 2025-3-21 21:12:16 | 只看該作者
2191-8112 f-the-art techniques for memory interface design.Covers memoThis book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT
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An Introduction to High-Speed DRAM,ity of DRAM. Wide I/O DRAM is one alternative type of memory, as is TSV-based stacked memory. In this chapter, we introduce the fundamentals of high-speed DRAM operation. We do not cover the basic knowledge of complementary metal-oxide semiconductor (CMOS) circuits including design, layout, and simulation.
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An Introduction to High-Speed DRAM,reased to keep pace with the performance of application system. Up to now, 7?Gb/s/pin GDDR5 is the fastest SDRAM adopted in graphics cards (R. Rho et al., ., vol. 45, no. 1, pp.?120–133, 2010; T.-Y. Oh et al., ., vol. 46, no. 1, pp.?120–133, 2011; D. Shin et al., IEEE Symp. on Very Large Scale Integ
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Transceiver Design, to compensate for the channel loss, pre-emphasis at the transmitter is performed and equalization at the receiver is performed. Also, the multi-channel interface causes crosstalk and skew effect. These effects should be covered in DRAM interface design. Other issues in transceiver design are impeda
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ssumed to have a basic knowledge of analysis and linear algebra at an undergraduate level. Stochastic models are applied in many fields such as engineering systems, physics, biology, operations research, business, economics, psychology, and linguistics. Stochastic modeling is one of the promising ki
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