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Titlebook: High Mobility and Quantum Well Transistors; Design and TCAD Simu Geert Hellings,Kristin De Meyer Book 2013 Springer Science+Business Media

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發(fā)表于 2025-3-21 16:10:22 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱High Mobility and Quantum Well Transistors
副標(biāo)題Design and TCAD Simu
編輯Geert Hellings,Kristin De Meyer
視頻videohttp://file.papertrans.cn/427/426268/426268.mp4
概述A comprehensive explanation of Quantum Well-based transistors and their electrical behaviour.A consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical
叢書名稱Springer Series in Advanced Microelectronics
圖書封面Titlebook: High Mobility and Quantum Well Transistors; Design and TCAD Simu Geert Hellings,Kristin De Meyer Book 2013 Springer Science+Business Media
描述For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials..High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained
出版日期Book 2013
關(guān)鍵詞Drain Junction; FETs; High-mobility semiconductors; Implant-Free; Ion Implants in Germanium; Quantum Well
版次1
doihttps://doi.org/10.1007/978-94-007-6340-1
isbn_softcover978-94-007-9569-3
isbn_ebook978-94-007-6340-1Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer Science+Business Media Dordrecht 2013
The information of publication is updating

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沙發(fā)
發(fā)表于 2025-3-21 23:43:04 | 只看該作者
Introduction,Chapter?1 briefly discusses the historical context and major technological developments in the microelectronics industry.
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地板
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5#
發(fā)表于 2025-3-22 10:40:33 | 只看該作者
Electrical TCAD Simulations and Modeling in Germanium,Chapter?4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
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發(fā)表于 2025-3-22 13:51:25 | 只看該作者
Investigation of Quantum Well Transistors for Scaled Technologies,Chapter?5 discusses the scaling issues in bulk silicon and bulk germanium MOSFET technologies. Afterwards, Heterostructure confinement is investigated as a means to enhance MOSFET scalability. The Implant-Free Quantum Well FET is introduced and its performance analyzed using TCAD simulations.
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發(fā)表于 2025-3-22 19:39:21 | 只看該作者
Implant-Free Quantum Well FETs: Experimental Investigation,Chapter?6 complements the design considerations of Implant-Free Quantum Well FETs presented in Chap.?.. Such transistors are fabricated and electrically characterized.
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978-94-007-9569-3Springer Science+Business Media Dordrecht 2013
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發(fā)表于 2025-3-23 06:28:57 | 只看該作者
High Mobility and Quantum Well Transistors978-94-007-6340-1Series ISSN 1437-0387 Series E-ISSN 2197-6643
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