Titlebook: High Magnetic Fields in Semiconductor Physics III; Quantum Hall Effect, Gottfried Landwehr Conference proceedings 1992 Springer-Verlag Berl

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Magnetic Field Induced Transitions Between Quantized Hall and Insulator States in a Dilute 2D ElectrGΩ. This phenomenon is observed in extremely high mobility Si MOSFETs, in a range of electron concentrations corresponding to a dilute 2D electron gas in or near an activated electronic transport regime. We attribute this effect to a modulation of the metal-insulator transition by the Quantum Hall effect.

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Exact Widths and Tails for Landau Levels Broadened by a Random Potential with an Arbitrary Correlatiular constant magnetic field of strength . and a random potential .. The probability distribution of . is assumed to be Gaussian with . (2) Here the overbar denotes the average with respect to the probability distribution, σ is the strength and λ the correlation length of the fluctuations of the potential.

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