Titlebook: High Magnetic Fields in Semiconductor Physics II; Transport and Optics Gottfried Landwehr Conference proceedings 1989 Springer-Verlag Berli

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Quantum Hall Effect and Related Magneto-transport in Silicon (001) MOSFETs Under Uniaxial StressThe phase diagram for the population of the lowest subbands in stressed Si (001) MOSFETs is deduced from Quantum Hall effect and Shubnikov-de-Haas data. Very good qualitative agreement is found with results of the random-phase approximation by Takada and Ando.

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On the Effect of the Coulomb Interaction in the Quantum Hall RegimeA characteristic feature of the quantum Hall effect (QHE) is that in the plateau regimes of the Hall voltage the parallel current vanishes and thus no dissipation occurs. Thus one may try to treat the system as being in thermal equilibrium under the constraint of a constant electric current.

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Structures in the Breakdown Curves of the Quantum Hall Effect in Narrow Channel GaAs/AlGaAs HeterostMeasurements of the breakdown of the quantum Hall effect (Q.H.E.) have been made on single heterostructures with a narrow constriction (～2 μm). Structures corresponding to sharp increases in dissipation were observed in both the source-drain current sweeps at constant magnetic field and the magnetic field sweeps at constant source-drain current.

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Many-Valley 2D Electron Systems in Strong Magnetic FieldsFor two-dimensional systems in strong magnetic fields the electron-electron interaction is of crucial importance. It defines the structure of the ground state and phase transitions depending on various physical parameters.

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Universality and Scaling of Electronic Transport in the Integral Quantum Hall Effect maximum of ... and the inverse of the half width for .. diverge like ~..We obtain . = 0.42 ± 0.04, independent of the Landau level index. These results confirm the prediction of the scaling theory that the characteristic power law behavior in the transport coefficients is a universal feature of del

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Electronic States in Two-Dimensional Random Systems in the Presence of a Strong Magnetic Fieldhich have been used are described. The importance of the various length scales in the problem is pointed out. A summary of the currently available definitions of localisation is given. The results for the localisation length, the inverse participation number of the states, and their shape, obtained

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Conductance Fluctuations on the Quantum Hall Plateaus in GaAs/AlGaAse-averaging, null detection techniques at fixed values of the magnetic field have shown that the Hall plateaus are flat to ～ 0.01 parts in 10. (i.e. 0.01 .) /2/ even though the current path within the sample switches continuously with the magnetic field over the field range defined by the plateau re

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Effect of Additional Irradiation Induced Scattering Centres on the Quantum Hall Plateau Widths in Gaeffect (QHE) plateaus within the localization model [1]. Scaling theory indicates that within a infinite two-dimensional system all states are localized by quantum coherence effects for any degree of disorder [2]. Concerning the QHE the localization model describes the effect of disorder on the loca