Titlebook: Heterostructures on Silicon: One Step Further with Silicon; Yves I. Nissim,Emmanuel Rosencher Book 1989 Kluwer Academic Publishers 1989 Ep

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Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlatticesadditional threading dislocations can glide into the epilayer during cooling process and that misfit dislocations at the interface can be forced to dissociate on a (111) plane inclined to the interface leaving one partial dislocation at the interface and forming extended stacking faults.

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Ge, GaAs and InSb Heteroepitaxy on (100) Silogy is extremely attractive. Furthermore large diameter Si wafers provide low cost robust and virtually defect free substrates. However, many materials problems arise due to the large lattice parameter and thermal expansion coefficient differences and difficulties in the nucleation of polar semiconductors on non-polar surfaces (2).

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Realization of Short Period SI/GE Strained-Layer Superlatticesstudied by LEED, interface sharpness by Auger Electron Spectroscopy and Raman measurements. Raman spectroscopy also gives information on Brillonin zone-folding effects and confined optical modes in thin layers.

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Dopant Segregation and Incorporation in Molecular Beam Epitaxypt profiles. However, a smearing of the profile as well as a dopant surface enrichment is observed for many dopants both in Si (Sb.,Ga., In., As.) and GaAs (Sn., Mg., Mn.). Moreover, incomplete incorporation of the incident dopant flux is reported for dopants where desorption is significant (Mg in GaAs. and In., Sb., Ga., in Si).

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Don W. Shawtion, its development, the appearance of secondary associated complaints, and its precise characteristics should all be ascertained in detail. The interview may involve relatives; some questions are extremely personal and should be discussed on a one-to-one basis, in a place where there is privacy, available counseling, and a relaxed environment.

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