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Titlebook: Handbuch Polizeimanagement; Polizeipolitik – Pol Dieter Wehe,Helmut Siller Living reference work 20220th edition Controlling.Dienstleistun

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31#
發(fā)表于 2025-3-27 00:12:03 | 只看該作者
Rainer Wendts, including technology, device designs, processing aspects,A NATO Advanced Research Workshop (ARW) entitled “Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators” was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to exam
32#
發(fā)表于 2025-3-27 03:49:09 | 只看該作者
33#
發(fā)表于 2025-3-27 06:31:58 | 只看該作者
Carsten Dübberss, including technology, device designs, processing aspects,A NATO Advanced Research Workshop (ARW) entitled “Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators” was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to exam
34#
發(fā)表于 2025-3-27 11:26:32 | 只看該作者
35#
發(fā)表于 2025-3-27 14:06:54 | 只看該作者
Gerd Thielmann,Jürgen Weibler,Thomas Models, including technology, device designs, processing aspects,A NATO Advanced Research Workshop (ARW) entitled “Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators” was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to exam
36#
發(fā)表于 2025-3-27 18:35:13 | 只看該作者
37#
發(fā)表于 2025-3-28 01:11:12 | 只看該作者
Andrea Fischbachetersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and d
38#
發(fā)表于 2025-3-28 04:42:24 | 只看該作者
39#
發(fā)表于 2025-3-28 08:17:40 | 只看該作者
40#
發(fā)表于 2025-3-28 11:32:48 | 只看該作者
Antonio Vera,Lara Jablonowski,Daniela Gutschmidteter-wave and terahertz (THz) regimes. Drift–diffusion model has been used here to scrutinize the high frequency features of the device. Also, corresponding avalanche response time (.) as well as transit time (.) has been ascertained to investigate device performance. The simulation studies show tha
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