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Titlebook: Handbook of Spintronics; Yongbing Xu,David D. Awschalom,Junsaku Nitta Reference work 2016 Springer Science+Business Media Dordrecht 2016 C

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樓主: ossicles
31#
發(fā)表于 2025-3-26 22:44:15 | 只看該作者
32#
發(fā)表于 2025-3-27 04:46:58 | 只看該作者
33#
發(fā)表于 2025-3-27 07:22:52 | 只看該作者
CPP-GMR: Materials and Propertiesgeometry) can give better access to the fundamental physics underlying GMR than measurements with the more usual current flow in the layer planes (CIP geometry). Because the same measuring current passes through all of the layers, the CPP-MR can often be described by simpler equations that allow sep
34#
發(fā)表于 2025-3-27 12:14:33 | 只看該作者
TMR and Al-O Based Magnetic Tunneling Junctions temperature (RT). AlO. is easily formed by oxidizing a pre-deposited Al layer. The MTJ with FM/I/FM sandwich core structure and the spin-dependent tunneling transport properties drew a wide range of interest resulting the so far largest magnetoresistance (MR) ratio of 81% at RT and 107% at 4.2 K in
35#
發(fā)表于 2025-3-27 16:21:24 | 只看該作者
Magnetic Nanoparticles and Granular Thin Filmss, nanowires, thin films, and bulk materials made of nanoscale building blocks or consist of nanoscale structures. The properties of nanostructured materials are so different from those of the bulk counterparts, especially in terms of magnetism. In this chapter, we will introduce some representative
36#
發(fā)表于 2025-3-27 20:55:00 | 只看該作者
Exchange Bias Material: FeMnferromagnet material systems, both in experiments and in theory. Among many antiferromagnetic materials, metastable γ-FeMn emerges as the ideal material to reveal the physics mechanism behind the EB. In this chapter, the EB properties of FeMn-based bilayers are introduced by starting with the analys
37#
發(fā)表于 2025-3-27 22:48:50 | 只看該作者
Magnetic/III-V Semiconductor Based Hybrid Structuress data storage industries. The second generation spintronics based on magnetic-semiconductor hybrid structures aims to develop new spin based devices such as spin transistors and spin logic, which will not just improve the existing capabilities of electronic transistors, but will have new functional
38#
發(fā)表于 2025-3-28 02:34:51 | 只看該作者
39#
發(fā)表于 2025-3-28 07:19:27 | 只看該作者
40#
發(fā)表于 2025-3-28 14:12:11 | 只看該作者
Electrical Spin Injection into InGaAs Quantum Dots/AlGaAs spin light-emitting diode (spin-LED) structures is summarized here. The emissions from the ensemble QDs are efficient and broad in energy due to inhomogeneous broadening (QD size distribution). The circular polarization was measured as functions of current, magnetic field, and temperature. E
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