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Titlebook: Handbook of Porous Silicon; Leigh Canham Reference work 20141st edition Springer International Publishing Switzerland 2014 MEMS Silicon.Po

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發(fā)表于 2025-3-21 18:52:14 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Handbook of Porous Silicon
編輯Leigh Canham
視頻videohttp://file.papertrans.cn/422/421958/421958.mp4
概述The most authoritative volume on porous silicon in a generation.Contains 150 chapters of contributions from almost 100 authors from around the world.Edited by an industry luminary.Comprehensive: cover
圖書封面Titlebook: Handbook of Porous Silicon;  Leigh Canham Reference work 20141st edition Springer International Publishing Switzerland 2014 MEMS Silicon.Po
描述.The Handbook of Porous Silicon brings together the expertise of a large, international team of almost 100 academic researchers, engineers and product developers from industry across electronics, medicine, nutrition and consumer care to summarize the field in its entirety with 150 chapters and 5000 references. The volume presents 5 parts which cover fabrication techniques, material properties, characterization techniques, processing and applications. Much attention was given in the past to its luminescent properties, but increasingly it is the biodegradability, mechanical, thermal and sensing capabilities that are attracting attention. The volume is divided into focussed data reviews with, wherever possible, quantitative rather than qualitative descriptions of both properties and performance. The book is targeted at undergraduates, postgraduates and experienced researchers.
出版日期Reference work 20141st edition
關鍵詞MEMS Silicon; Porous Silicon Applications; Porous Silicon LEDs; Porous Silicon Powder; Porous Silicon Pr
版次1
doihttps://doi.org/10.1007/978-3-319-05744-6
isbn_ebook978-3-319-05744-6
copyrightSpringer International Publishing Switzerland 2014
The information of publication is updating

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沙發(fā)
發(fā)表于 2025-3-21 23:17:14 | 只看該作者
Porous Silicon Formation by Anodizationr types, wafer cell design, post-anodization handling requirements (rinsing/drying/storage), parameters affecting layer uniformity, the use of nonaqueous electrolytes and electrolyte additives (surfactants, oxidizers, and other types), methods for tuning porosity, process control and natural variabi
板凳
發(fā)表于 2025-3-22 01:22:29 | 只看該作者
Porous Silicon Formation by Metal Nanoparticle-Assisted Etchingep or 2-step method are described as well as mechanism of metal-assisted chemical etching. Influence of various parameters such as nature of metal, temperature, etching solution composition, intrinsic properties of silicon substrate on the morphology of porous silicon, or nanostructures is discussed
地板
發(fā)表于 2025-3-22 06:43:37 | 只看該作者
Porous Silicon Formation by Photoetchingtrolytes is reviewed. The benefits of using an incoherent light source and specific oxidizing agents are highlighted. The technique is particularly useful for creating thin porous regions in .-type Si wafers, SOI wafers, micromachined wafers, or those that contain electronic circuitry.
5#
發(fā)表于 2025-3-22 09:10:02 | 只看該作者
Porous Silicon Formation by HNO3/HF Vapor EtchingS layers (PSLs) and/or a thick white layer identified as the (NH.).SiF. compound. Which phase dominates depends on the HNO./HF volume ratio. High-resolution SEM observations show that p- and p.-type PSLs are composed of dot-like crystalline Si particles embedded in an amorphous phase, having sizes n
6#
發(fā)表于 2025-3-22 14:22:29 | 只看該作者
7#
發(fā)表于 2025-3-22 20:28:21 | 只看該作者
Porous Silicon Formation by Mechanical Meansr single crystalline silicon wafers, highly dispersed and nanocrystalline silicon powders are produced. Pressing and sintering then lead to a porous matrix. The macroporous structures made in this way can then be permeated by meso- and micropores. The sinters have isotropic character of the pore dis
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發(fā)表于 2025-3-22 21:32:52 | 只看該作者
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發(fā)表于 2025-3-23 02:46:04 | 只看該作者
Mesoporous Siliconion can hardly be accessed directly but can be deduced by studying the complementary pore space surrounding this skeleton. By profiting from the potentials of nuclear magnetic resonance cryoporometry to probe fine details of the pore structure in mesoporous silicon, the results of systematic studies
10#
發(fā)表于 2025-3-23 08:17:56 | 只看該作者
Microporous Siliconsurface area (540–840 m./g) porous silicon structures with high micropore content have now been demonstrated by wafer anodization in very concentrated hydrofluoric acid, metal-assisted stain etching, galvanic etching, and silica reduction. The smallest electrochemically generated pores to date are p
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