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Titlebook: Handbook of Porous Silicon; Leigh Canham Reference work 2018Latest edition Springer International Publishing AG, part of Springer Nature 2

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樓主: Tyler
21#
發(fā)表于 2025-3-25 06:23:59 | 只看該作者
22#
發(fā)表于 2025-3-25 08:11:05 | 只看該作者
Porous Silicon Formation by HNO3/HF Vapor Etchingighly soluble in water, enabling fabrication of grooves in Si wafers. Control over the growth of the (NH.).SiF. is demonstrated to realize groove patterns, which could be used in a variety of applications.
23#
發(fā)表于 2025-3-25 13:59:48 | 只看該作者
Porous Silicon Formation by Porous Silica Reductiontechnical challenges are then briefly discussed and alternative reduction chemistries mentioned. Recent progress with reduction via liquid aluminum or aluminum chloride (250–800?.C) is highlighted as a more cost-effective route, although potential wettability issues need assessment.
24#
發(fā)表于 2025-3-25 17:58:09 | 只看該作者
Mesoporous Siliconcal etching. By utilizing nuclear magnetic resonance cryoporometry to probe fine details of the pore structure in mesoporous silicon, the results of systematic studies of the correlations between the fabrication conditions by anodization, and the resulting mesostructure are presented.
25#
發(fā)表于 2025-3-25 23:52:20 | 只看該作者
26#
發(fā)表于 2025-3-26 00:54:26 | 只看該作者
Porous Silicon Nanowiresuated. Specifically, different types of etchant solutions such as mixture of silver nitrite/hydrofluoric acid (AgNO./HF) or hydrogen peroxide/hydrofluoric acid (H.O./HF) will significantly affect the final morphology, which results in either porous nanowire or solid nanowire. A summary of the synthetic recipes is listed at the end of the chapter.
27#
發(fā)表于 2025-3-26 07:40:47 | 只看該作者
28#
發(fā)表于 2025-3-26 08:58:44 | 只看該作者
Porous Silicon Formation by Anodizationous electrolytes and electrolyte additives (surfactants, oxidizers, and other types), methods for tuning porosity, process control and natural variability, different electrode materials, and the requirements for maintaining health and safety.
29#
發(fā)表于 2025-3-26 13:53:43 | 只看該作者
Porous Silicon Formation by Galvanic Etching layers or for complete removal of a region of semiconductor. Recently it has found particular application to form combustible layers, which act as high-density energy sources for micromechanical systems. Galvanic etching has also been used in the fabrication of membranes, freestanding beams, and MEMS.
30#
發(fā)表于 2025-3-26 19:28:10 | 只看該作者
Porous Silicon Formation by Mechanical Meansatrix. The macroporous structures made in this way can then be permeated by meso- and micropores. The sinters have isotropic character of the pore distribution and morphology; this method is not limited by the wafer dimensions, and it is possible to make large-scale porous bodies, which is an advantage in comparison to lithographic methods.
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