Titlebook: Halbleiterprobleme 1; W. Schottky Book 1954 Springer-Verlag Berlin Heidelberg 1954 Halbleiter

negligence

,Bemerkung über den Gültigkeitsbereich der St?rungsrechnung für die Berechnung der übergangswahrscheme interval between two consecutive collisions is not large compared with the duration of the collisions. It is shown, how in many cases of practical interest the results of perturbation theory can be justified.

發(fā)微光

,Vergleichende Betrachtungen über die Natur der St?rstellen in Halbleitern und Phosphoren,errn ., da? die Donatoren und Akzeptoren in Phosphoren anscheinend genau entgegengesetzte Funktionen ausüben wie in Halbleitern. Nach einer ausführlichen Formulierung des Sachverhaltes und der daraus entspringenden Fragestellung versuchen wir einen allgemeineren Beitrag zu der Frage nach den Ladunge

大洪水

,Strahlungslose Elektronenüberg?nge an Gitterst?rstellen,g to the band theory it seems at first to be necessary to assume that the high excitation energy of the electron, which is owing to the energy of a large number of vibrational quanta, is transfered to the lattice in a simultaneous process (many quanta transition). All such attempts for an interpreta

完全

,Randschichteffekte an der Grenzfl?che Halbleiter/Vakuum und Halbleiter/Gasraum,he phase boundaries..At the phase boundary between a semiconductor and a gas, the gas particles are bounded and an electronic equilibrium between adsorbed particles and the solid is produced (chemisorption). The production of a space charge barrier layer at the surface of the solid, which is a conse

浪費(fèi)時間

,Elektronik der Doppelrandschichten und dünnen Zwischenschichten,t—as mainly observed by .—also at the boundary between two semiconductors. These zones, the conductivity of which differs from the interior of the semiconductor, are generally situated on both sides of the boundary. Therefore, this layer is called “Doppelrandschicht” (double-barrier layer) in contra

雜色

,über die elektrolytische Gleichrichtung, relation during the formation of the oxide layer is in agreement with theoretical expectations. An analysis of the frequency dependence of the impendance of the system lcads to the conclusion that the oxide layer is not homogeneous throughout its thickness. The layers nearest the metal show a good

PRO

Fehlordnungsgleichgewichte in halbleitenden Kristallen vom Standpunkt des Massenwirkungsgesetzes,

LIMN

Capitulate

宏偉

,Elektronik der Doppelrandschichten und dünnen Zwischenschichten,tor and then recombine in the interior thereof. It is shown that in accordance with the last-mentioned transition mechanism the theory contains . theory of homogeneous . junctions as a special case. Double-barrier layers having one semiconductor adjoining another semiconductor of the same conductivi