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Titlebook: HEMT Technology and Applications; Trupti Ranjan Lenka,Hieu Pham Trung Nguyen Book 2023 The Editor(s) (if applicable) and The Author(s), un

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發(fā)表于 2025-3-21 17:06:10 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱HEMT Technology and Applications
編輯Trupti Ranjan Lenka,Hieu Pham Trung Nguyen
視頻videohttp://file.papertrans.cn/421/420185/420185.mp4
概述Emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design.Covers two broad domains such as state-of-the-art research in GaN HEMT and Ga2O3 HEMT.Presents basic operation princip
叢書名稱Springer Tracts in Electrical and Electronics Engineering
圖書封面Titlebook: HEMT Technology and Applications;  Trupti Ranjan Lenka,Hieu Pham Trung Nguyen Book 2023 The Editor(s) (if applicable) and The Author(s), un
描述.This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research..
出版日期Book 2023
關(guān)鍵詞HEMT; HFET; GaAs Technology; GaN Technology; Ga2O3 Technology; Nanoelectronics; High Frequency; Power Elect
版次1
doihttps://doi.org/10.1007/978-981-19-2165-0
isbn_softcover978-981-19-2167-4
isbn_ebook978-981-19-2165-0Series ISSN 2731-4200 Series E-ISSN 2731-4219
issn_series 2731-4200
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor
The information of publication is updating

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沙發(fā)
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板凳
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地板
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Anadijiban Das,Andrew DeBenedictisible substitute to the GaN channel for the next generation power as well as RF devices and circuits. This chapter describes the polarization details of Al.Ga.N/Al.Ga.N heterostructure, and various device structure of AlGaN channel HEMTs and their static and dynamic characteristics.
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The Genesis of Simulation in DynamicsS) into the existing HEMT models and considering thin subcritical barrier thickness can satisfy the modeling challenges of the DC characteristics of this device. Moreover, oxide barrier interface charges also affect the shift in threshold voltage toward the positive .-axis of transfer characteristics up to a larger extent.
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發(fā)表于 2025-3-23 01:56:02 | 只看該作者
Enhancement-Mode MOSHEMT,S) into the existing HEMT models and considering thin subcritical barrier thickness can satisfy the modeling challenges of the DC characteristics of this device. Moreover, oxide barrier interface charges also affect the shift in threshold voltage toward the positive .-axis of transfer characteristics up to a larger extent.
10#
發(fā)表于 2025-3-23 06:00:06 | 只看該作者
https://doi.org/10.1057/9780230612129derlapped structure. The chapter also delves into the advantages of multigate structures and the use of quaternary indium aluminum gallium nitride (InAlGaN) compound to deliver higher breakdown voltage.
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