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21#
發(fā)表于 2025-3-25 06:02:19 | 只看該作者
22#
發(fā)表于 2025-3-25 09:29:49 | 只看該作者
Philip Arestis,Alfredo Saad-Filhoation distribution over crystallographically nonequivalent atomic positions and the shape (distortion) of the coordination polyhedra, plays a decisive role in determining the laser properties of the crystals and the conditions for their successful growth.
23#
發(fā)表于 2025-3-25 15:17:06 | 只看該作者
24#
發(fā)表于 2025-3-25 19:53:52 | 只看該作者
Morphological Instability and Inclusion Formation During Crystal Growth from a Flowing Solution, the solution moves relative to the crystal. The diffusion conditions in the boundary layer have a strong influence on the perfection of the growing crystal since they can cause morphological instability to develop. This often leads to liquid inclusions.
25#
發(fā)表于 2025-3-25 23:54:05 | 只看該作者
26#
發(fā)表于 2025-3-26 01:50:47 | 只看該作者
27#
發(fā)表于 2025-3-26 05:49:01 | 只看該作者
Political Ecology of AgricultureHeterostructures A.B. /A.B.are valuable materials for semiconductor electronics that are employed especially in the fabrication of various photoactive devices.
28#
發(fā)表于 2025-3-26 10:57:56 | 只看該作者
German Macroeconomic Thought and Its EffectsEutectic thin films of various microstructure are widely employed in metallurgy, machinery, and microelectronics [1]. Liquid-phase growth methods are used for preparing them as commonly as vapor-phase methods. An example is the preparation of protective coatings by rapid cooling of a melt layer [1, 2].
29#
發(fā)表于 2025-3-26 14:03:17 | 只看該作者
30#
發(fā)表于 2025-3-26 18:45:56 | 只看該作者
Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs,Heterostructures A.B. /A.B.are valuable materials for semiconductor electronics that are employed especially in the fabrication of various photoactive devices.
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