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51#
發(fā)表于 2025-3-30 09:21:31 | 只看該作者
52#
發(fā)表于 2025-3-30 14:04:31 | 只看該作者
53#
發(fā)表于 2025-3-30 19:16:24 | 只看該作者
54#
發(fā)表于 2025-3-31 00:40:09 | 只看該作者
55#
發(fā)表于 2025-3-31 04:23:01 | 只看該作者
Migration Policies in the EU and Spain, ideas of the linear optical properties. The next one is devoted to the description of various optical nonlinearities and of the underlying concepts. In an outlook we finally summarize, how optical nonlinearities can be used to realize pure optical bistability, electro-optic hybrid devices, optical amplifiers or optical oscillators.
56#
發(fā)表于 2025-3-31 05:22:30 | 只看該作者
Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSeort agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm). and a net carrier concentration of 4×10. cm. together with a Hall mobility of 100 cm. /Vs at room temperature. These values are the highest ones reported so far.
57#
發(fā)表于 2025-3-31 09:31:59 | 只看該作者
Prospects for II-VI Heterojunction Light Emitting Diodesy, which is the subject of this paper, is to join a p-type II–VI to an n-type II–VI to form a heterojunction (HJ). The HJ approach has been tried for over 20 years and has been quite successful in making pn junctions in these materials.
58#
發(fā)表于 2025-3-31 14:58:53 | 只看該作者
II-VI Heterostructures and Multi-Quantum Wellsnd to fabricate visible light emitters. Heteroep it axial structures are one of the promising approaches. The more interesting cases involve heavy strain and require particular values of the band offsets. We review recent work on CdTe/ZnTe and ZnSe/ZnTe multiquantum well structures.
59#
發(fā)表于 2025-3-31 17:43:51 | 只看該作者
60#
發(fā)表于 2025-3-31 22:05:07 | 只看該作者
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