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11#
發(fā)表于 2025-3-23 10:42:59 | 只看該作者
Molecular Techniques in Crop Improvementty and lineshape asymmetry in the optical conductivity provides thus a new suitable tool to characterize multilayer graphenes and to investigate the role of the underlying electron-lattice interaction.
12#
發(fā)表于 2025-3-23 13:56:16 | 只看該作者
13#
發(fā)表于 2025-3-23 19:36:36 | 只看該作者
Elastic Moduli in Graphene Versus Hydrogen Coverage,on loading than the one calculated for ideal graphene. Nevertheless, the corresponding Young modulus shows minor variations as function of coverage. Furthermore, we provide evidence that hydrogenation only marginally affects the Poisson ratio.
14#
發(fā)表于 2025-3-24 01:46:58 | 只看該作者
Synthesis of Graphene Films on Copper Substrates by CVD of Different Precursors,, based on the fast extraction from the hot zone of the furnace, was implemented allowing for rapid decrease of the temperature below . in few seconds. Samples grown under different conditions were analyzed by SEM, Raman spectroscopy and XPS with the aim to assess their characteristics and to refine the growth process.
15#
發(fā)表于 2025-3-24 05:32:40 | 只看該作者
Ritus Method and SUSY-QM: Theoretical Frameworks to Study the Electromagnetic Interactions in Graphe. We show how, for some class of external static magnetic fields, the graphene hamiltonian can be cast into a hamiltonian with quantum mechanical supersymmetric properties, leading us to an exactly solvable model. As an example of these two formalisms we work out the canonical case of a uniform constant magnetic field.
16#
發(fā)表于 2025-3-24 09:01:24 | 只看該作者
Molecular Techniques for Studying Viruseson loading than the one calculated for ideal graphene. Nevertheless, the corresponding Young modulus shows minor variations as function of coverage. Furthermore, we provide evidence that hydrogenation only marginally affects the Poisson ratio.
17#
發(fā)表于 2025-3-24 13:49:28 | 只看該作者
18#
發(fā)表于 2025-3-24 18:10:45 | 只看該作者
19#
發(fā)表于 2025-3-24 20:11:14 | 只看該作者
Understanding Chemical Reactivitybetween . and . hybridization of the interface atoms. We find a strong preferential disposition towards an . hybridization for the case of the C face, whereas towards the . scheme for the Si face. Notwithstanding purely quantitative, this mismatch is important and reflects the strength of the . bond in Si and C.
20#
發(fā)表于 2025-3-25 01:57:04 | 只看該作者
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