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Titlebook: Giant Magneto-Resistance Devices; Eiichi Hirota,Hirosi Sakakima,Koichiro Inomata Book 2002 Springer-Verlag Berlin Heidelberg 2002 Giant ma

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發(fā)表于 2025-3-21 17:51:36 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱Giant Magneto-Resistance Devices
編輯Eiichi Hirota,Hirosi Sakakima,Koichiro Inomata
視頻videohttp://file.papertrans.cn/386/385698/385698.mp4
概述First application-oriented book on this topic
叢書(shū)名稱Springer Series in Surface Sciences
圖書(shū)封面Titlebook: Giant Magneto-Resistance Devices;  Eiichi Hirota,Hirosi Sakakima,Koichiro Inomata Book 2002 Springer-Verlag Berlin Heidelberg 2002 Giant ma
描述In the last decade after the discovery of "giant magnetoresistance effects" in me- tallic multilayers worldwide developments in basic research and in engineering applications have been achieved, and various remarkable results have been ob- tained in both fields. On the basic research into the GMR effects an excellent re- view book edited by Hartmann was published in 1999, entitled "Magnetic Multi- layers and Giant Magnetoresistance", and it describes the experimental and theoretical aspects of GMR studies and the magneto-optics in metallic multilayers, including applications in electronic data storage fields. This book aims to give an overview on the electronics applications of the GMR in metallic multilayers, espe- cially on the sensors and memories in magnetic data storage, the main concerns of electronic engineers. If the mean free path of conduction electrons is longer than the period of the multilayer, and for a low applied magnetic field magnetizations in the adjacent magnetic layers are in antiparallel, the GMR effect in magnetic metallic multilay- ers occurs due to the resistance change in the electric current flowing in the layer plain, with a change in the magnetization f
出版日期Book 2002
關(guān)鍵詞Giant magnetoresistance (GMR); Magnetic random access memory (MRAM); Magnetic sensor and head; Metal mu
版次1
doihttps://doi.org/10.1007/978-3-662-04777-4
isbn_softcover978-3-642-07526-1
isbn_ebook978-3-662-04777-4Series ISSN 0931-5195 Series E-ISSN 2198-4743
issn_series 0931-5195
copyrightSpringer-Verlag Berlin Heidelberg 2002
The information of publication is updating

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發(fā)表于 2025-3-21 21:26:11 | 只看該作者
J?rgen Kristiansen,Pavel ?kaloudficial materials, such as, metal multilayers. The latter is the possibility of achieving high-density memory in hard disk drives (HDD) of computer peripherals. At present the introduction of GMR read heads in the HDD opens the door to the “Gb/in. memory era” and allows aerial recording densities (ARD) of up to 100 Gb/in..
板凳
發(fā)表于 2025-3-22 01:53:36 | 只看該作者
地板
發(fā)表于 2025-3-22 05:45:49 | 只看該作者
Physical Health and Fatherhood,ayers were investigated and have come into commerce recently. In this section, the physics of the exchange coupling, the mechanism of the GMR effect, the dependence of the MR properties on the multilayered structure, and the thermal stability of the MR ratios are discussed.
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發(fā)表于 2025-3-22 11:54:44 | 只看該作者
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發(fā)表于 2025-3-22 14:15:24 | 只看該作者
Introduction to Modern Product Development,ic current results from a net drift of electrons, when each electron nudges the one next to it. But only a small fraction, about 1 in 1000 (.., τ/.. ~0.001), of these scattering events alters the spin state of the electron.
7#
發(fā)表于 2025-3-22 19:44:21 | 只看該作者
Other GMR Devices,ic current results from a net drift of electrons, when each electron nudges the one next to it. But only a small fraction, about 1 in 1000 (.., τ/.. ~0.001), of these scattering events alters the spin state of the electron.
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發(fā)表于 2025-3-22 22:02:13 | 只看該作者
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發(fā)表于 2025-3-23 03:19:59 | 只看該作者
Tunnel-Type GMR (TMR) Devices, quantum mechanics. The basic principle of TMR is the dependence of the tunneling probability on the relative orientation of magnetization in the two ferromagnetic electrodes. The tunneling conductance is spin dependent due to the spin dependent density of states (DOS) at the Fermi level for ferromagnets.
10#
發(fā)表于 2025-3-23 07:21:27 | 只看該作者
Introduction,ficial materials, such as, metal multilayers. The latter is the possibility of achieving high-density memory in hard disk drives (HDD) of computer peripherals. At present the introduction of GMR read heads in the HDD opens the door to the “Gb/in. memory era” and allows aerial recording densities (ARD) of up to 100 Gb/in..
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