Titlebook: Generalized Models and Non-classical Approaches in Complex Materials 2; Holm Altenbach,Jo?l Pouget,Thomas Michelitsch Book 2018 Springer I

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Modeling Semiconductor Crystal Growth Under Electromagnetic Fields,ppress and control the adverse effect of natural convection and to obtain better mixing in the growth melt (liquid solution) for better crystal uniformity, which all are favorable conditions for a prolonged growth of high quality crystals. To this end, in parallel to well-designed experiments, model

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,Emulating the Raman Physics in the Spatial Domain with the Help of the Zakharov’s Systems,rov’s type for the interaction between high- and low-frequency (HF and LF) waves, in which the LF field is subject to diffusive damping. The model may apply to the propagation of HF waves in plasmas. The resulting NLSE includes a .-.-.-. (pseudo-SRS) term, i.e., a spatial-domain counterpart of the S

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Generalized Differential Effective Medium Method for Simulating Effective Physical Properties of 2Dnomena. This approach is based on the Generalized Differential Effective Medium (GDEM) method and, in contrast to the commonly used self-consistent methods, allows us to incorporate the percolation threshold into the homogenization scheme for simulation of the effective elastic moduli and electrical

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Analysis of Nonlinear Wave Propagation in Hyperelastic Network Materials,es. The effective constitutive law of the homogenized network is evaluated successively as an effective first nonlinear 1D continuum, based on a strain driven incremental scheme written over the reference unit cell, taking into account the changes of the lattice geometry. The dynamical equations of

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