Titlebook: Gate Dielectrics and MOS ULSIs; Principles, Technolo Takashi Hori Book 1997 Springer-Verlag Berlin Heidelberg 1997 LSI.MIS.MOS.dielectrics.

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書目名稱Gate Dielectrics and MOS ULSIs影響因子(影響力)




書目名稱Gate Dielectrics and MOS ULSIs影響因子(影響力)學(xué)科排名




書目名稱Gate Dielectrics and MOS ULSIs網(wǎng)絡(luò)公開度




書目名稱Gate Dielectrics and MOS ULSIs網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Gate Dielectrics and MOS ULSIs被引頻次




書目名稱Gate Dielectrics and MOS ULSIs被引頻次學(xué)科排名




書目名稱Gate Dielectrics and MOS ULSIs年度引用




書目名稱Gate Dielectrics and MOS ULSIs年度引用學(xué)科排名




書目名稱Gate Dielectrics and MOS ULSIs讀者反饋




書目名稱Gate Dielectrics and MOS ULSIs讀者反饋學(xué)科排名

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濃縮

MOS Fielid-Effect Transistor,In this chapter, we shall present the MOSFET theory and issues that relate to scaling and integration.

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搏斗

搏斗

https://doi.org/10.1007/978-3-322-92285-4n (.: ≥ 107 transistors on a chip) circuits such as microprocessors and semiconductor memories. As the name implies, the MIS transistor consists of a semiconductor substrate and a top gate electrode, between which an insulating .. of thickness d is formed (Fig. 1.1). Source and drain junctions are f

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https://doi.org/10.1007/978-3-531-92693-3IS transistor (Fig. 1.1), the MIS capacitor has only two terminals, and is the simplest and most useful device in the study of semiconductor surfaces and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken

巨碩

橫條

Takashi HoriThe reader will obtain updated information for not only deep-submicron ULSIs having nanometer-range ultrathin gate- dielectrics but also nitrided oxides from this first book presenting them in detail