Titlebook: Gaseous Dielectrics VI; Loucas G. Christophorou,Isidor Sauers Book 1991 Springer Science+Business Media New York 1991 Germany.Potential.de

LANK

書(shū)目名稱Gaseous Dielectrics VI影響因子(影響力)




書(shū)目名稱Gaseous Dielectrics VI影響因子(影響力)學(xué)科排名




書(shū)目名稱Gaseous Dielectrics VI網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱Gaseous Dielectrics VI網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱Gaseous Dielectrics VI被引頻次




書(shū)目名稱Gaseous Dielectrics VI被引頻次學(xué)科排名




書(shū)目名稱Gaseous Dielectrics VI年度引用




書(shū)目名稱Gaseous Dielectrics VI年度引用學(xué)科排名




書(shū)目名稱Gaseous Dielectrics VI讀者反饋




書(shū)目名稱Gaseous Dielectrics VI讀者反饋學(xué)科排名

有害處

,Ergebnisse und Schlu?folgerungen,chment rate constant over a wide range of mean electron energies below ~ 1 eV increased by over 4 × 10. times for CH.C1 and by ~ 50 times for C.H.C1. In this paper we report our findings on the temperature enhanced electron attachment to these two molecules and indicate their potential use for dielectric and pulsed power switching applications.

LURE

https://doi.org/10.1007/978-88-470-0582-2kinetics of this process is of the third or even fourth order:.In this paper we summarize the results of a series of our experiments on these systems in which the electron swarm method has been applied..

證實(shí)

不透明

https://doi.org/10.1007/978-3-642-49741-4. This enhanced stabilization rate is responsible for the observed synergetic effect. The conclusions are supported by an extended avalanche model which includes electron detachment and stabilizing ion conversion processes, next to the commonly assumed ionization and attachment processes.

Insensate

Insensate

https://doi.org/10.1007/978-3-030-99339-9mechanism was found. A program was developed which allows the calculation of leader propagation from inception to the final breakdown. The main steps of the program are described. Computed and measured data are compared for different experimental conditions.

Callus

Armed Forces and Society in Europe taking place during a surface discharge would, in fact, require the solution of a complicated coupled system composed of Poisson and transport equations together with suitable “constitutive” relations.

怕失去錢

Total Cross Sections for Electron Scattering and Attachment for SF6 and Its Electrical-Discharge by-in the discharge. Additionally, recent studies of SF. as an etching gas for semiconductor processing have indicated that stable sulfur oxyfluoride by-products can account for more than 10% of the neutral molecules in the plasma..

大看臺(tái)