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Titlebook: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion; Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon Book 2018

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發(fā)表于 2025-3-21 19:21:25 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
編輯Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon
視頻videohttp://file.papertrans.cn/381/380405/380405.mp4
概述Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers.Demo
叢書(shū)名稱Integrated Circuits and Systems
圖書(shū)封面Titlebook: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion;  Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon Book 2018
描述.This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion..Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;.Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;.Enables design of smaller, cheaper and more efficient power supplies..
出版日期Book 2018
關(guān)鍵詞Gallium Nitride; GaN device physics; GaN for Power Conversion; GaN transistors; GaN Reliability
版次1
doihttps://doi.org/10.1007/978-3-319-77994-2
isbn_softcover978-3-030-08594-0
isbn_ebook978-3-319-77994-2Series ISSN 1558-9412 Series E-ISSN 1558-9420
issn_series 1558-9412
copyrightSpringer International Publishing AG, part of Springer Nature 2018
The information of publication is updating

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發(fā)表于 2025-3-21 21:41:18 | 只看該作者
Vertical GaN Transistors for Power Electronics, technology, detailing out the three-terminal devices developed over the last decade. Power converters rely on solid state devices featuring diodes and transistors as their basic building blocks. GaN technology is an ever-expanding topic for R&D, proving its potential to solve several challenges in
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Impact of Parasitics on GaN-Based Power Conversion,cs whenever they were found to be limiting the system operation or performance in some manner. The current approach has always been to mitigate the effects of these unwanted parasitics through design improvements, be it on a device, package, or system level. As these parasitics are, for the most par
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發(fā)表于 2025-3-22 18:57:15 | 只看該作者
GaN in Switched-Mode Power Amplifiers, power converters, and wireless power transfer (WPT) among myriad other applications. Advances in power semiconductor devices, magnetics, and circuit design are opening the door to much more efficient generation and delivery of power at radio frequencies. This chapter presents an overview of switche
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發(fā)表于 2025-3-23 03:10:00 | 只看該作者
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics,One of the major factors in determining the quality of GaN technology is the epitaxial step. This chapter reviews two different approaches: the use of bulk GaN substrates and GaN-on-Si epitaxy.
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