Titlebook: Gallium Nitride Electronics; Rüdiger Quay Book 2008 Springer-Verlag Berlin Heidelberg 2008 Materials for electronics.Materials processing.

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書目名稱Gallium Nitride Electronics影響因子(影響力)




書目名稱Gallium Nitride Electronics影響因子(影響力)學(xué)科排名




書目名稱Gallium Nitride Electronics網(wǎng)絡(luò)公開度




書目名稱Gallium Nitride Electronics網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Gallium Nitride Electronics被引頻次




書目名稱Gallium Nitride Electronics被引頻次學(xué)科排名




書目名稱Gallium Nitride Electronics年度引用




書目名稱Gallium Nitride Electronics年度引用學(xué)科排名




書目名稱Gallium Nitride Electronics讀者反饋




書目名稱Gallium Nitride Electronics讀者反饋學(xué)科排名

Foreshadow

0933-033X materials to packaging.Interdisciplinary approach.Includes s.Gallium Nitride Electronics. covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of device

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https://doi.org/10.1007/978-3-642-28909-5n (MOCVD) is analyzed systematically. Nitride-specific material characterization, doping, and material quality issues are analyzed. Substrate properties are reviewed systematically with respect to electronic requirements.

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Annette Bruce Dr.,Christoph Jerominchottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.

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Somber

Book 2008 graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics..

Somber

基因組

Device Processing Technology,chottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.

肥料

Device Characterization and Modeling, involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride devices, including the modeling of contacts, diodes, dispersion, and thermal aspects.

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A Practical Case for Using Agile Methods,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.