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Titlebook: Gallium Arsenide Digital Circuits; Omar Wing Book 1990 Kluwer Academic Publishers 1990 Multiplexer.Signal.communication.electronics.field-

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書目名稱Gallium Arsenide Digital Circuits
編輯Omar Wing
視頻videohttp://file.papertrans.cn/381/380402/380402.mp4
叢書名稱The Springer International Series in Engineering and Computer Science
圖書封面Titlebook: Gallium Arsenide Digital Circuits;  Omar Wing Book 1990 Kluwer Academic Publishers 1990 Multiplexer.Signal.communication.electronics.field-
描述Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat- ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non- linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi- mate circuit performance
出版日期Book 1990
關(guān)鍵詞Multiplexer; Signal; communication; electronics; field-effect transistor; gate array; heterojunction bipol
版次1
doihttps://doi.org/10.1007/978-1-4613-1541-4
isbn_softcover978-1-4612-8826-8
isbn_ebook978-1-4613-1541-4Series ISSN 0893-3405
issn_series 0893-3405
copyrightKluwer Academic Publishers 1990
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Transmission-Gate Logic,lack of DC isolation between the gate and the source or drain in a GaAs MESFET makes the use of the transmission gate problematic. Fig. 4.1 shows a transmission gate which is either a depletion or enhancement transistor. The circuit is symmetrical with respect to the gate, and current can flow from
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Source-Coupled Logic Circuits,latter being proportional to the square of the thickness of the active layer, so that the threshold voltage is very sensitive to geometric variations. At the present time, the processing technology is such that it is difficult to limit the variation of the threshold voltage to within ±20 . while its
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978-1-4612-8826-8Kluwer Academic Publishers 1990
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Gallium Arsenide Digital Circuits978-1-4613-1541-4Series ISSN 0893-3405
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https://doi.org/10.1007/978-1-4613-1541-4Multiplexer; Signal; communication; electronics; field-effect transistor; gate array; heterojunction bipol
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