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Titlebook: GaN and SiC Power Devices; From Fundamentals to Maurizio Di Paolo Emilio Book 2024 The Editor(s) (if applicable) and The Author(s), under e

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樓主: Goiter
31#
發(fā)表于 2025-3-26 23:12:17 | 只看該作者
2690-0300 circuit design with GaN and SiC devices.Explains principles.This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconduc
32#
發(fā)表于 2025-3-27 04:21:32 | 只看該作者
Books of the 19th and 20th Centuries,nse. To put it into perspective, a mere 1% elevation in industrial efficiency equates to saving 93.6 TWh of energy, thus averting the emission of 32 million kilograms of CO., as asserted by the International Energy Agency.
33#
發(fā)表于 2025-3-27 08:23:52 | 只看該作者
34#
發(fā)表于 2025-3-27 11:22:32 | 只看該作者
35#
發(fā)表于 2025-3-27 13:50:25 | 只看該作者
https://doi.org/10.1007/978-3-642-85476-7coming essential for their robustness and efficiency. Additionally, motor drives equipped with GaN components demonstrate superior performance, with reduced energy losses and increased lifespan. This chapter delves deep into these applications and others, spotlighting GaN‘s transformative role in modern power electronics.
36#
發(fā)表于 2025-3-27 18:59:42 | 只看該作者
GaN Applications,coming essential for their robustness and efficiency. Additionally, motor drives equipped with GaN components demonstrate superior performance, with reduced energy losses and increased lifespan. This chapter delves deep into these applications and others, spotlighting GaN‘s transformative role in modern power electronics.
37#
發(fā)表于 2025-3-27 22:27:20 | 只看該作者
Gert-Martin Greuel,Gerhard Pfisterlutionizing industries, and propelling us toward a sustainable and energy-efficient future. In this chapter, we will delve into the intricate workings of SiC MOSFETs, Schottky Diodes, and Modules, unraveling the remarkable capabilities that make them the cornerstone of the SiC revolution.
38#
發(fā)表于 2025-3-28 04:12:01 | 只看該作者
39#
發(fā)表于 2025-3-28 07:39:52 | 只看該作者
Silicon Power Devices,tubes of the 1950s, these functions were first performed with silicon bipolar power devices and their advances. Despite having size, control, and protection restrictions, transistor technology was developed to satisfy the ever-increasing need for power density.
40#
發(fā)表于 2025-3-28 11:13:50 | 只看該作者
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