Titlebook: GaN and SiC Power Devices; From Fundamentals to Maurizio Di Paolo Emilio Book 2024 The Editor(s) (if applicable) and The Author(s), under e

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Maurizio Di Paolo EmilioProvides a single-source reference on power circuit design with wide bandgap semiconductors.Covers both theoretical and practical aspects of circuit design with GaN and SiC devices.Explains principles

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nitric-oxide

https://doi.org/10.1007/978-3-031-50654-3Wide Bandgap Semiconductors for Power Electronics; Vertical GaN and SiC Power Devices; Gallium Nitride

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https://doi.org/10.1007/978-1-4612-5700-4p, WBG materials are more desirable for power electronics converters due to several factors. This chapter delves into the fascinating world of Wide-Bandgap materials and examines why they have become the darlings of the power electronics community.

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Complement

Gert-Martin Greuel,Gerhard Pfisternsformative shift. Silicon Carbide (SiC) devices have emerged as the vanguards of this technological revolution, promising unparalleled efficiency, reduced energy wastage, and compact solutions across a myriad of applications. As we embark on this journey through the realm of SiC devices, we will ex

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Gert-Martin Greuel,Gerhard Pfisteral properties, SiC has revolutionized various industries, spanning electronics, energy, and beyond. This chapter delves into the multifaceted applications of SiC, illuminating its pivotal role in shaping our modern world.