| 書(shū)目名稱 | FinFETs and Other Multi-Gate Transistors |
| 編輯 | Jean-Pierre Colinge |
| 視頻video | http://file.papertrans.cn/343/342854/342854.mp4 |
| 概述 | Explains the physics and properties of MuGFET devices, how they are made and how circuit designers can use them to improve the performances of integrated circuits.Covers the emergence of quantum effec |
| 叢書(shū)名稱 | Integrated Circuits and Systems |
| 圖書(shū)封面 |  |
| 描述 | .FinFETs and Other Multi-Gate Transistors. provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. ...The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known....FinFETs and Other Multi-Gate Transistors. is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.. |
| 出版日期 | Book 2008 |
| 關(guān)鍵詞 | CMOS; FinFET; Leistungsfeldeffekttransistor; MOSFET; circuit; design; electronics; field-effect transistor; |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-0-387-71752-4 |
| isbn_softcover | 978-1-4419-4409-2 |
| isbn_ebook | 978-0-387-71752-4Series ISSN 1558-9412 Series E-ISSN 1558-9420 |
| issn_series | 1558-9412 |
| copyright | Springer-Verlag US 2008 |
|Archiver|手機(jī)版|小黑屋|
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