| 書(shū)目名稱(chēng) | Field-effect Self-mixing Terahertz Detectors |
| 編輯 | Jiandong Sun |
| 視頻video | http://file.papertrans.cn/343/342672/342672.mp4 |
| 概述 | Nominated as an Outstanding Ph.D. thesis by the Chinese Academy of Sciences.Built a comprehensive field-effect terahertz detector model which is applicable for detector optimization.Presents for the t |
| 叢書(shū)名稱(chēng) | Springer Theses |
| 圖書(shū)封面 |  |
| 描述 | A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. |
| 出版日期 | Book 2016 |
| 關(guān)鍵詞 | Finite-Difference Time-Domain (FDTD); GaN/AlGaN Heterostructure; High-Electron-Mobility Transistor (HE |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-662-48681-8 |
| isbn_softcover | 978-3-662-56948-1 |
| isbn_ebook | 978-3-662-48681-8Series ISSN 2190-5053 Series E-ISSN 2190-5061 |
| issn_series | 2190-5053 |
| copyright | Springer-Verlag Berlin Heidelberg 2016 |
|Archiver|手機(jī)版|小黑屋|
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