Titlebook: Electronic Structure of Semiconductor Interfaces; Winfried M?nch Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusiv

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2690-0300 ly and quantitatively explains the experimentally observed barrier heights of .Schottky. contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.978-3-031-59066-5978-3-031-59064-1Series ISSN 2690-0300 Series E-ISSN 2690-0327

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Book 2024 the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of .Schottky. contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.

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Bettina Bühler,Wenbo V. Li,Werner Linde aus Stein, Schlamm, ?l u. dgl., ferner durch Korrosionen. Diese werden durch den Gehalt des Wassers an Salzen, Laugen, Gasen und organischen Stoffen bedingt; schlie?lich geh?ren hierher die Sch?den durch Ermüdungskorrosionen, die auf den Gehalt des Wassers an Natronlauge zurückzuführen sind.

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Lisa Campo-Engelstein,Paul BurcherA timely exploration of ethical issues in reproductive medicine from leading scholars in the field.Fresh coverage of hot new topics, including gene editing (CRISPR), as well as continuing debates.High

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