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Titlebook: Electronic Structure of Semiconductor Interfaces; Winfried M?nch Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusiv

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發(fā)表于 2025-3-21 16:16:04 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Electronic Structure of Semiconductor Interfaces
編輯Winfried M?nch
視頻videohttp://file.papertrans.cn/321/320529/320529.mp4
概述Explains the formation of interface-induced gap states and electric dipoles in Schottky contacts and heterostructures.Includes experimental Schottky barrier heights, slope parameters, and valence-band
叢書名稱Synthesis Lectures on Engineering, Science, and Technology
圖書封面Titlebook: Electronic Structure of Semiconductor Interfaces;  Winfried M?nch Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusiv
描述.This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or .Schottky. contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of .Schottky. contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
出版日期Book 2024
關鍵詞metal semi-conductor; band gap; interface-induced gap states; band structure; semiconductor interfaces
版次1
doihttps://doi.org/10.1007/978-3-031-59064-1
isbn_softcover978-3-031-59066-5
isbn_ebook978-3-031-59064-1Series ISSN 2690-0300 Series E-ISSN 2690-0327
issn_series 2690-0300
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
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書目名稱Electronic Structure of Semiconductor Interfaces影響因子(影響力)




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沙發(fā)
發(fā)表于 2025-3-21 23:29:25 | 只看該作者
Synthesis Lectures on Engineering, Science, and Technologyhttp://image.papertrans.cn/f/image/320529.jpg
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發(fā)表于 2025-3-22 03:54:25 | 只看該作者
地板
發(fā)表于 2025-3-22 08:01:16 | 只看該作者
Eric Petitclerc,Peter C. Brooks because special techniques have been developed to fabricate clean metal-silicon interfaces. The barrier heights of these diodes decrease with increasing ideality factors. The analysis of these data reveals three different mechanisms, namely patches with lower barrier heights and lateral dimensions
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發(fā)表于 2025-3-22 12:30:17 | 只看該作者
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https://doi.org/10.1007/978-3-319-23621-6e saturation position with increasing irradiation time, irrespective of whether the semiconductors are initially doped .- or .-type. The gap states of the irradiation-induced native defects result from the complex band structure in the same way as the interface-induced gap states. Therefore, it is n
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發(fā)表于 2025-3-23 04:17:57 | 只看該作者
Cervicothoracic Metastatic Spine Disease,e gap states are linked to the complex band structure of the semiconductors. They are described by two bulk parameters. One is the branch point at which the charge character of the gap states changes from acceptor- to donor-like. The second describes the interface dipole.Physically, it is given by t
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發(fā)表于 2025-3-23 05:45:43 | 只看該作者
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