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Titlebook: Exploring Memory Hierarchy Design with Emerging Memory Technologies; Guangyu Sun Book 2014 Springer International Publishing Switzerland 2

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樓主: fathom
11#
發(fā)表于 2025-3-23 10:19:10 | 只看該作者
History and Theory of SuperconductorsDue to the continuously reduced feature size, supply voltage, and increased on-chip density, modern microprocessors are projected to be more susceptible to soft error strikes.
12#
發(fā)表于 2025-3-23 16:01:16 | 只看該作者
13#
發(fā)表于 2025-3-23 18:06:01 | 只看該作者
14#
發(fā)表于 2025-3-24 00:17:14 | 只看該作者
15#
發(fā)表于 2025-3-24 03:54:57 | 只看該作者
Exploring the Vulnerability of CMPs to Soft Errors with 3D Stacked Non-Volatile Memory,Due to the continuously reduced feature size, supply voltage, and increased on-chip density, modern microprocessors are projected to be more susceptible to soft error strikes.
16#
發(fā)表于 2025-3-24 08:29:43 | 只看該作者
Conclusions,As the technologies scale down, the memory hierarchy implemented with traditional memory technologies cannot satisfy the requirements of high performance, low power, and high reliability.
17#
發(fā)表于 2025-3-24 13:31:16 | 只看該作者
Book 2014s based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc.? The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the “memory wall.”? The authors discuss memory design from various perspe
18#
發(fā)表于 2025-3-24 18:47:56 | 只看該作者
1876-1100 or memory design with improved performance, energy consumptiThis book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc.? The techniques
19#
發(fā)表于 2025-3-24 21:12:00 | 只看該作者
Book 2014 to leverage advantages from multiple memory technologies; an analytical model named “Moguls” is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.
20#
發(fā)表于 2025-3-24 23:39:23 | 只看該作者
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