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Titlebook: Experimental Electronics for Students; K. J. Close,J. Yarwood Book 1979 K.J. Close and J. Yarwood 1979 CMOS.circuit.development.diodes.ele

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發(fā)表于 2025-3-23 10:14:39 | 只看該作者
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發(fā)表于 2025-3-23 14:58:04 | 只看該作者
Book 1979equipped electrical engineering or physics laboratory. it is possible to plan interesting experiments to study active and passive com- ponents, basic circuit functions, modular encapsulations and monolithic integrated circuits. The work may range from the formal investigation of a device new to the
13#
發(fā)表于 2025-3-23 18:13:18 | 只看該作者
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發(fā)表于 2025-3-24 00:33:41 | 只看該作者
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發(fā)表于 2025-3-24 02:27:00 | 只看該作者
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發(fā)表于 2025-3-24 07:11:14 | 只看該作者
Towards a New Industrial Policy in India families of logic gates, both in integrated circuit form: (a) transistor — transistor logic (TTL) and (b) complementary — metal — oxide — semiconductor (CMOS, pronounced ‘see-moss’). Both are to be described here but with attention given first to TTL because it came first chronologically and has be
17#
發(fā)表于 2025-3-24 11:58:36 | 只看該作者
József Kuti,Péter Galambos,Péter Baranyitwo main kinds of monolithic integrated circuit: (a) the planar bipolar silicon transistor type and (b) those based on metal-oxide-semiconductor transistors (mosts or mosfets). Both kinds (a) and (b) are formed within the surface of a silicon chip (or slice) which has dimensions of typically 1.25 ×
18#
發(fā)表于 2025-3-24 16:27:33 | 只看該作者
19#
發(fā)表于 2025-3-24 21:45:53 | 只看該作者
https://doi.org/10.1007/978-981-13-3699-7The current . which flows through a p-n junction is related to the pd . which exists across the junction by the equation . where . is the reverse saturation current, . is the electronic charge, . is the Boltzmann constant and . is the junction temperature on the absolute scale.
20#
發(fā)表于 2025-3-25 01:54:21 | 只看該作者
https://doi.org/10.1007/1-4020-5256-1These transistors will henceforward be referred to as bipolar transistors. Because silicon bipolar transistors exhibit much smaller leakage currents and can be operated over a wider temperature range than their germanium counterparts, they are used almost exclusively. A convenient silicon n-p-n bipolar transistor for experiments is the BC 107.
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