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Titlebook: Exciton and Domain Luminescence of Semiconductors; N. G. Basov Book 1979 Consultants Bureau, New York 1979 crystal.diffusion.electron.scat

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發(fā)表于 2025-3-21 16:15:50 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Exciton and Domain Luminescence of Semiconductors
編輯N. G. Basov
視頻videohttp://file.papertrans.cn/319/318409/318409.mp4
叢書名稱The Lebedev Physics Institute Series
圖書封面Titlebook: Exciton and Domain Luminescence of Semiconductors;  N. G. Basov Book 1979 Consultants Bureau, New York 1979 crystal.diffusion.electron.scat
描述This volume, which comprises a collection of papers by leading Soviet researchers, is devoted to topics in the luminescence of semiconductors. An experimental check is made on a series of predictions of the theory of ionization domains. A new low-voltage luminescence of zinc sulfide is described and investigated and is found to be due to a high-frequency electrical instability. A detailed study of the electrical properties of the instability and of the characteristics of the emission testifies to the pre-breakdown character of the electroluminescence and to the acousto- electrical nature of the instability. The luminescence excitation spectra of AIN crystals excited in the region of the fundamental absorption contain lines belonging to excitons and their phonon replicas. The symmetry of the electronic and vibrational transitions corresponding to parts of these lines is interpreted. The results of a study of the scattering of light by electron - hole drops in germanium are cited. The results are discussed on the basis of a theory of exciton condensation in which allowance is made for the diffusion of excitons toward the surface of the drops and for the surface tens ion of the electr
出版日期Book 1979
關鍵詞crystal; diffusion; electron; scattering; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4615-8573-2
isbn_softcover978-1-4615-8575-6
isbn_ebook978-1-4615-8573-2
copyrightConsultants Bureau, New York 1979
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沙發(fā)
發(fā)表于 2025-3-21 20:17:12 | 只看該作者
Domain Luminescence of Zinc Sulfide,construction of active and passive circuit elements capable of operating at high temperatures over a wide range of voltages and, especially, in the construction of sources and receivers of short-wavelength light. There is particular interest in sources in which electrical energy is converted directl
板凳
發(fā)表于 2025-3-22 02:01:47 | 只看該作者
Luminescence Excitation Spectrum for Excitation in the Region of Fundamental Absorption, and the Elthe region of the fundamental absorption. The band structure of crystals is usually studied in terms of the spectral variation of the reflection coefficient R. This method has many shortcomings, however. In the first place it involves laborious calculations, starting from the Kramers-Kronig relation
地板
發(fā)表于 2025-3-22 05:53:59 | 只看該作者
Investigation of Condensation of Excitons in Germanium by Light-Scattering Method,r phase transition in a gas—liquid system. When the exciton density in the semiconductor exceeds a certain threshold value corresponding to the given temperature (for temperatures below the critical temperature), the excitons condense into “l(fā)iquid” droplets, the electrons and holes in which are coll
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The Theory of Ionization Domains. Generalization and Experimental Check,ove through the crystal only very slowly. Electrons traversing this double layer will be accelerated within it, and will impact-ionize all centers located within its confines. Under certain conditions, the layers of both positive and negative charge can be produced and sustained through this ionizat
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ted. The results of a study of the scattering of light by electron - hole drops in germanium are cited. The results are discussed on the basis of a theory of exciton condensation in which allowance is made for the diffusion of excitons toward the surface of the drops and for the surface tens ion of the electr978-1-4615-8575-6978-1-4615-8573-2
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發(fā)表于 2025-3-23 01:04:36 | 只看該作者
https://doi.org/10.1007/978-3-7091-8790-6ove through the crystal only very slowly. Electrons traversing this double layer will be accelerated within it, and will impact-ionize all centers located within its confines. Under certain conditions, the layers of both positive and negative charge can be produced and sustained through this ionizat
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