Titlebook: Examining the Submicron World; Ralph Feder,J. Wm. McGowan,Douglas M. Shinozaki Book 1986 Plenum Press, New York 1986 Design.Image.Nation.e

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Applications and Limitations of Sims,han 10 nm can be achieved with sensitivities down to 1 x 10. atoms/cm. for the important dopant elements. The lateral resolution of the technique under ideal circumstances can be better than 0.5 μm. Practical and theoretical limitations in three-dimensional depth profiling are discussed.

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Electron Spectroscopies for Studying Chemical Bondings at Surfaces,hniques that has just recently grazed the area of 10 microns lateral resolution. The situation is even worse if one realizes that most of the corresponding instruments are still one or two orders of magnitude above that last figure. This could summarize the unfortunate (?) present status of the grou

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Properties of Polymer Resists,ature, contact microradiography.. Advances in the microelectronics industry and efforts to increase the number of elements in integrated circuits have led to improvements in lithographic techniques recently. For contact microscopy using x-rays important products of these advances has been the availa

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